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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120D_D ON1933 MGY25N120D
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT's are specifi...3PBL) High Speed Eoff: 216 mJ/A typical at 125C High Short Circuit Capability - 10 ms minimum Soft R... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
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| File Size |
167.51K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT's are specifi...3PBL) High Speed Eoff: 216 mJ/A typical at 125C High Short Circuit Capability - 10 ms minimum Robust... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SK1454
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| OCR Text |
...gs at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipatio...3PBL
Ratings 450 30 30 120 250 3.5 150 -55 to +150
Unit V V A A W W
C C
Electrical Charact... |
| Description |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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| File Size |
110.67K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SK1465
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| OCR Text |
...gs at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipatio...3PBL
Ratings 900 30 8 16 200 3.5 150 -55 to +150
Unit V V A A W W
C C
Electrical Character... |
| Description |
N-Channel Silicon MOSFET
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| File Size |
119.57K /
4 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SK1466
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| OCR Text |
...gs at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipatio...3PBL
Ratings 900 30 16 32 250 3.5 150 -55 to +150
Unit V V A A W W
C C
Electrical Characte... |
| Description |
N-Channel Silicon MOSFET
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| File Size |
123.89K /
4 Page |
View
it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SC4119 0435
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| OCR Text |
...t Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Votlage Emitter-to-Base Voltage Collector Current Collector Current (Pu...3PBL
Ratings 1500 800 5 15 30 3 3.5
Unit V V V A A A W W
Tc=25C
Tj Tstg
250 150 -55 to ... |
| Description |
NPN Triple Diffused Planar Silicon Darlington Transistor 800V/15A Driver Applications
From old datasheet system
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| File Size |
38.68K /
4 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY20N120D_D ON1930 MGY20N120D ON1929
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| OCR Text |
... an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT's are specifi...3PBL) High Speed Eoff: 160 mJ per Amp typical at 125C High Short Circuit Capability - 10 ms minimum ... |
| Description |
IGBT & DIODE IN TO-264 20 A @ 90 28 A @ 25 1200 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
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| File Size |
167.83K /
6 Page |
View
it Online |
Download Datasheet |
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