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For tral Found Datasheets File :: 807    Search Time::1.797ms    
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    KMM53232000CK KMM53232000CKG

Samsung semiconductor
Part No. KMM53232000CK KMM53232000CKG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, ou...
Description 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

File Size 406.91K  /  20 Page

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    KMM5364003CSW KMM5364003CSWG

Samsung semiconductor
Part No. KMM5364003CSW KMM5364003CSWG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE Test condition : Vih/Vil=2.6/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF Parameter Fast page mode cycle time CA...
Description 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V

File Size 381.79K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM372F410CK KMM372F410CS KMM372F400CS KMM372F400CK
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tREF tWCS tCWD DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=3.3V0.3V. See notes 1,2.) Test condition : Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V, Output load...
Description 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V

File Size 458.10K  /  20 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM372C410CK KMM372C400CS KMM372C410CS KMM372C400CK
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tREF tWCS tCWD tAWD DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, Output ...
Description 4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V

File Size 412.29K  /  19 Page

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    KMM5321200C2W KMM5321200C2WG

Samsung semiconductor
Part No. KMM5321200C2W KMM5321200C2WG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA -6- Rev. 0.0 (Nov. 1997) DRAM MODULE Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF Paramet...
Description 1Mx32 DRAM SIMM (1MX16 Base)

File Size 269.10K  /  17 Page

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    KMM53232000BK KMM53232000BKG

Samsung semiconductor
Part No. KMM53232000BK KMM53232000BKG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, ou...
Description 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

File Size 371.59K  /  18 Page

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    KMM53232004BK KMM53232004BKG

Samsung semiconductor
Part No. KMM53232004BK KMM53232004BKG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCS tWCH tWP tRWL tCWL tDS tDH tREF tCSR tCHR tRPC tCPA DRAM MODULE AC CHARACTERISTICS (0CTA70C, Vcc=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, ou...
Description 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V

File Size 416.12K  /  19 Page

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    KMM5321204C2W KMM5321204C2WG

Samsung semiconductor
Part No. KMM5321204C2W KMM5321204C2WG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA -6- Rev. 0.0 (Nov. 1997) DRAM MODULE Test condition : Vih/Vil=2.4/0.8V, V oh/Vol=2.0/0.8V, Output loading CL=100pF Parame...
Description 1Mx32 DRAM SIMM (1MX16 Base)

File Size 277.91K  /  17 Page

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    KMM53216000BK KMM53216000BKG

Samsung semiconductor
Part No. KMM53216000BK KMM53216000BKG
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE AC CHARACTERISTICS (0CTA70C, VCC=5.0V10%. See notes 1,2.) Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V, out...
Description
File Size 356.28K  /  18 Page

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    KMM5328000BSW

Samsung Semiconductor
Part No. KMM5328000BSW
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH tREF tWCS tCSR tCHR tRPC tCPA DRAM MODULE Test condition : Vih/Vil=2.6/0.8V, Voh/Vol=2.4/0.4V, output loading CL=100pF Parameter Fast page mode cycle time CA...
Description 4MBx32 DRAM Simm Using 4MBx16

File Size 345.03K  /  18 Page

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