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  vdgs Datasheet PDF File

For vdgs Found Datasheets File :: 57    Search Time::2.344ms    
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    BS250

GE Security, Inc.
GE[General Semiconductor]
Part No. BS250
OCR Text ... Unit V V V mA W C C -VDSS -vdgs VGS -ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage D...
Description DMOS Transistors (P-Channel)
DMOS Transistor (P-Channel)

File Size 237.33K  /  5 Page

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    BUK7107-40ATC BUK7907-40ATC BUK7107-40AIC

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7107-40ATC BUK7907-40ATC BUK7107-40AIC
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IDG(CL) IG...
Description    TrenchPLUS standard level FET
V(ds): 40V; V(dgs): 40V; trench PLUS standard level FET. For variable valve timing for engines, electrical power assisted steering

File Size 136.87K  /  16 Page

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    Philips
Part No. BUK7107-55ATE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) pe...
Description TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 75A I(D) | SOT-426
TrenchPLUS standard level FET

File Size 129.86K  /  15 Page

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    Philips
Part No. BUK7905-40AIE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Ts...
Description TrenchPLUS standard level FET

File Size 131.73K  /  16 Page

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    Philips
Part No. BUK7109-75AIE BUK7909-75AIE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Ts...
Description TRANSISTOR | MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | TO-220VAR
TrenchPLUS standard level FET

File Size 131.63K  /  15 Page

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    Philips
Part No. BUK7109-75ATE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) pe...
Description 晶体| MOSFET | N-CHANNEL | 70V V(BR)DSS | 75A I(D) | SOT-426封装
TrenchPLUS standard level FET

File Size 137.52K  /  16 Page

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    BUK7907-55AIE BUK7107-55AIE

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7907-55AIE BUK7107-55AIE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) Ts...
Description    TrenchPLUS standard level FET

File Size 128.30K  /  15 Page

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    Philips
Part No. BUK7907-55ATE
OCR Text ... System (IEC 60134). Symbol VDS vdgs VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) dr...
Description TrenchPLUS standard level FET

File Size 118.40K  /  15 Page

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    2N7000

http://
GE[General Semiconductor]
Part No. 2N7000
OCR Text ... Unit V V V mA mW C C VDSS vdgs VGS ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 C Forward Voltage Dr...
Description DMOS Transistors (N-Channel)

File Size 231.31K  /  5 Page

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    BS817

DIODES[Diodes Incorporated]
Part No. BS817
OCR Text ...herwise specified Symbol -VDSS -vdgs VGS -ID Pd Tj, TSTG Value 200 200 20 100 310 -55 to +150 Unit V V V mA mW C Characteristic Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) Power Dissipation @ TC = 50C (Note 1) Ope...
Description P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

File Size 57.17K  /  2 Page

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For vdgs Found Datasheets File :: 57    Search Time::2.344ms    
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