vesm pdf Datasheet P2 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : C221M CM685 SD150 00007 XF001 GAT10 XC3190L H78M15AT
	Product Description
	Full Text Search

vesm Datasheet PDF File

For vesm Found Datasheets File :: 51 Search Time::1.625ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 |

					Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A8.2LFV
OCR Text	...5~150 Unit mW C C 0.50.05 vesm 1. CATHODE1 2. CATHODE2 3. ANODE Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.86 to 21.08; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD)
File Size	126.44K / 3 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	JDH3D01FV
OCR Text	...stimated failure rate, etc). vesm JEDEC JEITA TOSHIBA 0.50.05 V 1-2S1C Weight:0.0015g(typ.) Electrical Characteristics (Ta = 25C) Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF I...
Description	Diode Silicon Epitaxial Schottky Barrier Type For wave detection
File Size	175.82K / 5 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Semiconductor
Part No.	SSM3J16FV
OCR Text	...stimated failure rate, etc). vesm JEDEC JEITA TOSHIBA Weight :1.5mg 0.50.05 0.4 Drain-Source voltage VDS -20 V 0.4 Characteristics Symbol Rating Unit 1 2 2-1L1B Note 1: Total rating, mounted...
Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications 场效应晶体管硅P通道马鞍山型高速开关应用模拟开关应
File Size	169.49K / 5 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Semiconductor
Part No.	SSM3K03FV
OCR Text	... 0.4 1.Gate 2.Source 3.Drain vesm JEDEC Note: JEITA Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2L1B high temperature/current/voltage and the significant change in temperature, etc.) may cause this pro...
Description	High Speed Switching Applications 高速开关应
File Size	520.44K / 5 Page	View it Online	Download Datasheet

					http:// Toshiba Semiconductor
Part No.	SSM3K15FV07 SSM3K15FV
OCR Text	...perature Storage temperature vesm 1. Gate 2. Source 3. Drain Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this produ...
Description	High Speed Switching Applications
File Size	120.01K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3K16FV
OCR Text	...emperature 0.50.05 0.4 vesm 1.Gate 2.Source 3.Drain Note: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in temperature, etc.) may cause this...
Description	Silicon N Channel MOS Type High Speed Switching Applications
File Size	124.16K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	RN2107MFV RN2108MFV RN2109MFV
OCR Text	...uit and Bias Resistor Values vesm Type No. RN2107MFV RN2108MFV RN2109MFV R1 (k) 10 22 47 R2 (k) 47 47 22 JEDEC JEITA TOSHIBA 2-1L1A Weight: 0.0015 g (typ.) Maximum Ratings (Ta = 25C) Characteristic Collector-base voltage ...
Description	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
File Size	197.03K / 6 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	SSM3J15FV
OCR Text	... x 1.6 t, Cu Pad: 0.585 mm ) vesm JEDEC JEITA TOSHIBA 0.5 0.05 2-1L1B Weight: 0.0015 g(typ.) 0.5mm 0.45mm 0.45mm 0.4mm Marking 3 Equivalent Circuit (top view) 3 DQ 1 2 1 2 Handling Precaution Whe...
Description	Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
File Size	134.16K / 5 Page	View it Online	Download Datasheet

					Toshiba Semiconductor
Part No.	2SC6026MFV
OCR Text	...0 Unit V V V mA mA mW C C vesm JEDEC JEITA TOSHIBA 1.BASE 2.EMITTER 3.COLLECTOR 2-1L1A * : Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6mm) Mount Pad Dimensions (Reference) 0.5 0.45 Weight: 0.0015 g (typ.) 1.15 0.4 0.45...
Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
File Size	250.84K / 4 Page	View it Online	Download Datasheet

					Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
Part No.	DF3A3.6FV
OCR Text	...ing 150 150 -55~150 Unit mW C C vesm 1.CATHODE1 2.CATHODE2 3.ANODE Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in temperature, etc.) may cause ...
Description	Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD）保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
File Size	125.00K / 3 Page	View it Online	Download Datasheet

For vesm Found Datasheets File :: 51 Search Time::1.625ms
Page :: | 1 | <2> | 3 | 4 | 5 | 6 |

▲Up To Search▲

Price and Availability

Price & Availability of vesm

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

1.1726169586182