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00T01 AD652SW 1000V 2SK10 HT48R06 1S120 F1100 DP3110
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  vsd Datasheet PDF File

For vsd Found Datasheets File :: 23978    Search Time::1.531ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP51N25
OCR Text ...tics and Maximum Ratings IS ISM vsd trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 51A, di/dt 200A/s, VDD BVDSS, Starting T...
Description 250V N-Channel MOSFET

File Size 600.04K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDP46N30
OCR Text ...tr td(off) tf Qg Qgs Qgd IS ISM vsd trr Qrr NOTES: Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse...
Description 300V N-Channel MOSFET

File Size 693.64K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
Part No. FQA10N80C
OCR Text ...ics and Maximum Ratings IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco...
Description    800V N-Channel MOSFET
800V N-Channel Advance Q-FET C-Series

File Size 616.89K  /  8 Page

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA11N90C
OCR Text ...ics and Maximum Ratings IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco...
Description 900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
900V N-Channel Advanced QFET C-Series

File Size 705.18K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FDC6432SH FDC6432SHNL
OCR Text ...n-Source Diode Characteristics vsd tRR IRM QRR Drain-Source Diode Forward Voltage Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient therma...
Description 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET

File Size 195.96K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQA12P20
OCR Text ...ics and Maximum Ratings IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -12.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Rec...
Description 200V P-Channel MOSFET

File Size 627.53K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB66N15TM FDB66N15
OCR Text ...tics and Maximum Ratings IS ISM vsd trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.38mH, IAS = 66A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 66A, di/dt 200A/s, VDD BVDSS, Starting T...
Description 150V N-Channel MOSFET

File Size 625.77K  /  8 Page

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    FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. FQA13N50CF
OCR Text ...tr td(off) tf Qg Qgs Qgd IS ISM vsd trr Qrr Notes: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID ...
Description 500V N-Channel MOSFET 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 636.57K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FDB52N20TM FDB52N20
OCR Text ...tr td(off) tf Qg Qgs Qgd IS ISM vsd trr Qrr NOTES: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward...
Description 200V N-Channel MOSFET

File Size 617.98K  /  8 Page

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    FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Vectron International, Inc.
Part No. FDB44N25TM FDB44N25
OCR Text ...tics and Maximum Ratings IS ISM vsd trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 44A, di/dt 200A/s, VDD BVDSS, Starting TJ...
Description 250V N-Channel MOSFET 44 A, 250 V, 0.069 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 655.80K  /  8 Page

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