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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP51N25
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| OCR Text |
...tics and Maximum Ratings IS ISM vsd trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 51A, di/dt 200A/s, VDD BVDSS, Starting T... |
| Description |
250V N-Channel MOSFET
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| File Size |
600.04K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP46N30
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| OCR Text |
...tr td(off) tf Qg Qgs Qgd IS ISM vsd trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse... |
| Description |
300V N-Channel MOSFET
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| File Size |
693.64K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor] FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FQA10N80C
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 10.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
800V N-Channel MOSFET 800V N-Channel Advance Q-FET C-Series
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| File Size |
616.89K /
8 Page |
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it Online |
Download Datasheet
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA11N90C
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Reco... |
| Description |
900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET 900V N-Channel Advanced QFET C-Series
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| File Size |
705.18K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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| Part No. |
FDC6432SH FDC6432SHNL
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| OCR Text |
...n-Source Diode Characteristics
vsd tRR IRM QRR Drain-Source Diode Forward Voltage Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovery Charge
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient therma... |
| Description |
12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET
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| File Size |
195.96K /
8 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA12P20
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| OCR Text |
...ics and Maximum Ratings
IS ISM vsd trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -12.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Rec... |
| Description |
200V P-Channel MOSFET
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| File Size |
627.53K /
8 Page |
View
it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB66N15TM FDB66N15
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| OCR Text |
...tics and Maximum Ratings IS ISM vsd trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.38mH, IAS = 66A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 66A, di/dt 200A/s, VDD BVDSS, Starting T... |
| Description |
150V N-Channel MOSFET
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| File Size |
625.77K /
8 Page |
View
it Online |
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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| Part No. |
FQA13N50CF
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| OCR Text |
...tr td(off) tf Qg Qgs Qgd IS ISM vsd trr Qrr
Notes:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
Test Conditions
VGS = 0 V, ID ... |
| Description |
500V N-Channel MOSFET 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
636.57K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
FDB52N20TM FDB52N20
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| OCR Text |
...tr td(off) tf Qg Qgs Qgd IS ISM vsd trr Qrr
NOTES:
TC = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward... |
| Description |
200V N-Channel MOSFET
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| File Size |
617.98K /
8 Page |
View
it Online |
Download Datasheet
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FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor] Vectron International, Inc.
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| Part No. |
FDB44N25TM FDB44N25
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| OCR Text |
...tics and Maximum Ratings IS ISM vsd trr Qrr
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 44A, di/dt 200A/s, VDD BVDSS, Starting TJ... |
| Description |
250V N-Channel MOSFET 44 A, 250 V, 0.069 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
655.80K /
8 Page |
View
it Online |
Download Datasheet
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