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  0.250 Datasheet PDF File

For 0.250 Found Datasheets File :: 172608    Search Time::3.703ms    
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    2SA1190 2SA1191

HITACHI[Hitachi Semiconductor]
Part No. 2SA1190 2SA1191
OCR Text ...FE* 1 2SA1191 Max -- -- -- -0.1 -0.1 800 Min Typ Max -- -- -- -0.1 -0.1 800 Unit V V V A A Test conditions I C = -10 A, IE = 0 I C = -1 ...250 -- -- -- -- -- Typ -- -- -- -- -- -- -120 -- -120 -- -5 -- -- 250 -- -- -- -- VCE(sat) ...
Description Silicon PNP Epitaxial

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ... PC Tj Tstg Ratings -60 -60 -7 -0.5 -1.0 0.9 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics (Ta = 25C) Item Symbol Min ...250 mA I B1 = -IB2 = -0.5 mA Unit V A A Test conditions I C = -1 mA, RBE = VCB = -60 V, IE = 0 VEB ...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA2009

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2009
OCR Text 0.425) For low-frequency high breakdown voltage amplification I Features * High collector to emitter voltage VCEO * Low noise voltage NV 0.3+0.1 -0.0 3 0.15+0.10 -0.05 1.250.10 2.10.1 5 1 2 0.20.1 (0.65) (0.65) ...
Description    Silicon PNP epitaxial planer type

File Size 41.91K  /  1 Page

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    2SA2018 2SA2030 2SA2119K

Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SA2018 2SA2030 2SA2119K
OCR Text ...izes or 1208 sizes. 2SA2018 0.3 (3) (1) (2) 0.2 0.5 0.5 0.2 0.55 0.7 Applications For switching, for muting. External dimen...250 mV IC=200mA / IB=10mA Collector-emitter saturation voltage VCE (sat) - 260 - MHz VCE=2V, IE=10mA...
Description Low frequency transistor

File Size 78.51K  /  3 Page

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    2SA2022 2SC5610

Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Part No. 2SA2022 2SC5610
OCR Text ...mm 2041A [2SA2022/2SC5610] 10.0 3.2 3.5 7.2 Features * Adoption of MBIT processes. * Large current capacitance. * Low collector-to-em...250) 300 15 Ratings min typ (-150) 130 (-)0.85 max (-300) 260 (-)1.2 Unit mV mV V V V V V ns ns ns n...
Description NPN Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-220ML
From old datasheet system

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    2SA2028

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2028
OCR Text 0.425) For DC-DC converter I Features * Large current capacitance * Low collector to emitter saturation voltage * High-speed switching *...250.10 2.10.1 5 1 2 0.20.1 (0.65) (0.65) 1.30.1 2.00.2 10 0.90.1 0.9+0.2 -0.1 I Abs...
Description Silicon PNP epitaxial planer type

File Size 41.26K  /  1 Page

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    2SA2031 2SC5669

SANYO[Sanyo Semicon Device]
Formosa MS
Sanyo Electric Co.,Ltd.
Part No. 2SA2031 2SC5669
OCR Text ...ion of MBIT process. 15.6 14.0 2.6 3.2 4.8 2.0 1.6 2.0 20.0 1.3 1.2 15.0 20.0 0.6 1.0 1 0.6 2 3 1.4 Spec...250 (-)230 (-)6 (-)15 (-)30 2.5 140 150 -55 to +150 Unit V V V A A W W C C Electrical Characte...
Description NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications
PNP Epitaxial Planar Silicon Transistor 230V / 15A, AF100W Output Applications
230V / 15A/ AF100W Output Applications

File Size 33.17K  /  4 Page

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    2SA2037 2SC5694

SANYO[Sanyo Semicon Device]
Part No. 2SA2037 2SC5694
OCR Text ... Dimensions unit : mm 2042B 8.0 Relay drivers, lamp drivers, motor drivers and printer drivers. [2SA2037 / 2SC5694] 1.4 Features...250)300 15 150 (290)330 (50)28 (--150)130 (--300)260 (--)0.85 (--)1.2 Ratings min typ max (--)0.1 (-...
Description DC / DC Converter Applications

File Size 37.73K  /  5 Page

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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ensions (Units : mm) MPT3 1.5 0.4 1.0 (1) 4.0 2.5 0.5 0.5 (3) 1.5 0.4 (1)Base (2)Collector (3)Emitter 0.4 Each...250 -500 mV IC= -1.0A, IB= -100mA hFE VCE= -2V, IC= -100mA 120 - 390 - fT - 350 - MHz VCE= -10V, IE=...
Description MEDIUM POWER TRANSISTOR

File Size 42.56K  /  4 Page

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (...250 90 Max -100 -100 500 -0.2 -1.1 ns V V pF Unit nA nA V 1 2001-10-29 2SA2056 Marki...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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