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0.35mm Datasheet PDF File

For 0.35mm Found Datasheets File :: 4322 Search Time::1.5ms
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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
Part No.	STDD15 STDD15-04W STDD15-05W STDD15-07S STDD15-07SFILM STDD15-05WFILM STDD15-04WFILM
OCR Text	...NEFITS s s 10 mA 15 V 150 C 0.51 V SOT323-3L STDD15-xxW SOT323-6L STDD15-xxS s s s Low diode capacitance Device designed for...35mm Note: The device fulfills the MSL level 1 after leadfree soldering profile. Ordering code...
Description	LOW CAPACTITANCE DETECTION DIODE LOW CAPACTITANCE DETECTION DIODE LOW CAPACITANCE DETECTION DIODE PTC 1.60A 30V RESETTABLE 30R SER Resettable Fuse; Series:30R; Thermistor Type:PTC; Operating Voltage Max:30V; Holding Current:0.9A; Tripping Current:1.8A; Length:12.2mm; Lead Pitch:5.1mm; Initial Resistance Min:0.07ohm; Initial Resistance Max:0.22ohm RoHS Compliant: NA FUSE,1.85A, 30V, RESET,0.40"WX0.62"H 0.20"LS,TH,0.03 OHMS FUSE,1.85A, 30V, RESET,0.40"WX0.62"H 0.20"LS,TH,0.03 OHMS CAPACTITANCE检测二极管
File Size	41.51K / 6 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] Vishay Telefunken
Part No.	BFQ81
OCR Text	...st Conditions VCE = 25 V, VBE = 0 VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 IC = 30 mA, IB = 3 mA VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 15 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 16 V VCEsat 0.2 ...
Description	From old datasheet system Silicon NPN Planar RF Transistor
File Size	149.29K / 10 Page	View it Online	Download Datasheet

				http:// Vishay Telefunken VISAY[Vishay Siliconix]
Part No.	BFR193T BFR193TW
OCR Text	...st Conditions VCE = 20 V, VEB = 0 VCB = 10 V VEB = 1 V, IC = 0 IC = 1 mA IC = 50 mA, IB = 5 mA VCE = 8 V, IC = 30 mA Symbol Min ICES ICBO IEBO V(BR)CEO 12 VCEsat hFE 50 Typ Max Unit 100 mA 100 nA 1 mA V 0.5 V 150 0.1 100 Electrical AC...
Description	Silicon NPN Planar RF Transistor From old datasheet system
File Size	68.37K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HIP1031 HIP1031AS
OCR Text	... . . . -40oC to 125oC - VSAT at 0.6A . . . . . . . . . . . . . . . . . . . . . . . . . 1.0V Max - Power Supply Range . . . . . . . . . . . ....35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bott...
Description	Half Amp High Side Driver with Overload Protection
File Size	28.84K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] WJ Communications
Part No.	AG402-89 AG402-89G AG402-89PCB
OCR Text	...5 +17.1 3.8 1900 14.5 +28.7 +16.0 4.91 60 Max 6000 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 (2) Noise Figure Units ...35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add a...
Description	Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:17-55 RoHS Compliant: No LJT 55C 55#22D SKT WALL RECP Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:17-35 RoHS Compliant: No AG402-89 InGaP HBT Gain Block
File Size	246.63K / 6 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	S6B0086
OCR Text	0.0 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form...35mm * Input Lead Pitch = 0.80mm * Output Lead Pitch = 0.22mm 3 S6B0086 80CH COMMON / SEGME...
Description	80 CH SEGMENT / COMMON DRIVER FOR DOT MATRIX LCD
File Size	322.57K / 31 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D263238A K4D263238A-GC33 K4D263238A-GC36 K4D263238A-GC40 K4D263238A-GC45 K4D263238A-GC50
OCR Text	...L (144-Ball FBGA) Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice....35mm * Typo corrected 128M DDR SDRAM Revision 1.9 (July 18, 2002) * Changed power dissipation...
Description	DIODE ZENER SINGLE 500mW 3.9Vz 0.05mA-Izt 0.05 5uA-Ir 2 SOD-123 3K/REEL 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL DIODE ZENER SINGLE 500mW 3.3Vz 0.05mA-Izt 0.05 7.5uA-Ir 1.5 SOD-123 3K/REEL
File Size	295.84K / 17 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
OCR Text	...L (144-Ball FBGA) Revision 2.0 January 2003 Samsung Electronics reserves the right to change products or specification without notice....35mm 128M DDR SDRAM Revision 1.9 (August 12, 2002) * Changed tRC of K4D26323RA-GC2A from 20tC...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	300.83K / 18 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] Vishay Telefunken
Part No.	MCL4148 MCL4448
OCR Text	...mA mA mA mW C C tp=1ms VR=0 Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions mounted on epoxy-glass hard tissue, Fig. 1, 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Value 500 Uni...
Description	From old datasheet system Silicon Epitaxial Planar Diodes
File Size	57.83K / 5 Page	View it Online	Download Datasheet

				Vishay Telefunken VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
Part No.	BF994SA BF994SB BF994S BF994
OCR Text	... 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF994S BF994SA BF994SB Type Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS ...
Description	From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode CAP CER 47PF 50V 5% C0G 0603
File Size	117.47K / 7 Page	View it Online	Download Datasheet

For 0.35mm Found Datasheets File :: 4322 Search Time::1.5ms
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