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  1-memory 2-memory Datasheet PDF File

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    Holtek Semiconductor Inc.
Part No. HT48R05A-1
OCR Text 1 8-bit otp microcontroller 1 november 29, 2000 general description the device is an 8-bit high performance risc-like microcontroller design...memory prom 32 8 data memory ram buzzer driving pair and pfd supported halt function and wak...
Description 8-Bit High Performance RISC-like OTP Microcontroller(8位、高性能、类似RISC、一次可编程微控制器,用于多I/O接口设备)

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    Holtek Semiconductor Inc.
Part No. HT48R10A-1
OCR Text 1 8-bit microcontroller 1 november 29, 2000 general description the device is an 8-bit high performance risc-like microcontroller designed f...memory rom 64 8 data memory ram buzzer driving pair and pfd supported halt function and wake...
Description 8-Bit High Performance RISC-like Microcontroller Suitable for Multiple I/O Application(高性能、指令类似RISC位微控制器,用于多I/O接口设备)

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    Holtek Semiconductor Inc.
Part No. HT48R30A-1
OCR Text 1 8-bit microcontroller 1 november 29, 2000 general description the device is an 8-bit high performance risc-like microcontroller designed f...memory rom 96 8 data memory ram buzzer driving pair and pfd supported halt function and wake...
Description 8-Bit High Performance RISC-like Microcontroller Suitable for Multiple I/O Application(高性能、指令类似RISC位微控制器,用于多I/O接口设备)

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    Holtek Semiconductor Inc.
Part No. HT48R50A-1
OCR Text 1 8-bit microcontroller 1 december 19, 2000 general description this device is an 8-bit high performance risc-like microcontroller designed ...memory rom 160 8 data memory ram buzzer driving pair and pfd supported halt function and wak...
Description 8-Bit High Performance RISC-like Microcontroller Suitable for Multiple I/O Application(高性能、指令类似RISC位微控制器,用于多I/O接口设备)

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    ZICM357P2-1 ZICM357P2-KIT1-1 ZICM357P2-1C

California Eastern Labs
Part No. ZICM357P2-1 ZICM357P2-KIT1-1 ZICM357P2-1C
OCR Text 1 meshconnect? em357 module description cels meshconnect? em357 module combines high perfor - mance rf solution with the market's premier zigbee stack. the addition of on board memory enables o ver- t he- a ir (ota) programming with...
Description Ember EM357 Transceiver Based Module

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    M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I M5M5256DP-55LL-I M5M5256DP-55XL-I M5M5256DP-70LL-I M5M5256DP-70XL-I M

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M5M5256DP-45LL-1 M5M5256DP-45LL-I M5M5256DP-45XL-I M5M5256DP-55LL-I M5M5256DP-55XL-I M5M5256DP-70LL-I M5M5256DP-70XL-I M5M5256RV-70XL-I M5M5256RV-55XL-I M5M5256RV-45XL-I M5M5256RV-70LL-I M5M5256RV-55LL-I M5M5256RV-45LL-I M5M5256VP M5M5256FP-70LL-I D99001 M5M5256FP-45LL-I M5M5256FP-45XL-I M5M5256FP-55LL-I M5M5256FP-55XL-I M5M5256FP-70XL-I M5M5256VP-70XL-I M5M5256KP-45LL-I M5M5256KP-45XL-I M5M5256KP-55LL-I M5M5256KP-55XL-I M5M5256KP-70LL-I M5M5256KP-70XL-I M5M5256VP-45LL-I M5M5256VP-45XL-I M5M5256VP-55LL-I M5M5256VP-55XL-I M5M5256VP-70LL-I M5M5256DVP-70LL-I M5M5256DVP-70XL-I M5M5256DFP-45LL-I M5M5256DFP-55LL-I M5M5256DFP-70LL-I M5M5256DFP-70XL-I M5M5256DFP-45XL-I M5M5256DFP-55XL-I M5M5256DKP-70XL-I M5M5256DRV-55XL-I M5M5256DVP-55XL-I M5M5256DVP-45XL-I M5M5256DKP-55XL-I M5M5256DRV-70XL-I M5M5256DKP-45LL-I M5M5256DVP-55LL-I M5M5256DVP-45LL-I M5M5256DRV-45LL-I M5M5256DRV-55LL-I M5M5256DRV-70LL-I M5M5256DKP-55LL-I
OCR Text ...NFIGURATION (TOP VIEW) A14 A12 1 2 A7 3 A6 4 A5 5 A4 6 7 A3 A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 28 27 26 25 24 23 22 21 20 19 18 17...memory units Outline 28P2C-B (DRV) MITSUBISHI ELECTRIC 1 '97.4.7 MITSUBISHI LSIs M...
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM 262144位(32768 - Word位)的CMOS静态RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-PDIP -40 to 85 262144位(32768 - Word位)的CMOS静态RAM
From old datasheet system

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    Turbo IC
Part No. 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28C256ASI-1 28C256ASI-2 28C256ASI-3 28C256ASI-4 28C256API-1 28C256API-2 28C256API-3 28C256API-4 28C256AJM-1 28C256AJM-2 28C256AJM-3 28C256AJM-4 28C256AJI-2 28C256ATI-2 28C256ATC-4 28C256ATC-2 28C256ATC-1 28C256APC-1 28C256APM-2 28C256APM-4 28C256ATM-4 28C256ATM-2 28C256AJC-4 28C256AJC-1 28C256AJC-2 28C256ATM-3 28C256ATM-1
OCR Text ... a write cycle, the address and 1 to 64 bytes of data are internally latched, freeing the address and data bus for other microprocessor oper...memory. data input/output (i/o0-i/o7) data input/output pins are used to read data out of the memory...
Description High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.

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    LTC3831-1 LTC3831EGN-1

Linear Technology
Part No. LTC3831-1 LTC3831EGN-1
OCR Text 1 High Power Synchronous Switching Regulator Controller for DDR Memory Termination FEATURES s s DESCRIPTIO s s s s s s s s s s s s VOUT as Low as 0.4V High Power Switching Regulator Controller for DDR Memory Termination VOUT...
Description High Power Synchronous Switching Regulator Controller for DDR Memory Termination

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    AM29F100-1 AM29F100B-120DGC AM29F100B-120DGC1 AM29F100B-120DGE AM29F100B-120DGE1 AM29F100B-120DGI AM29F100B-120DGI1 AM29

AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
Part No. AM29F100-1 AM29F100B-120DGC AM29F100B-120DGC1 AM29F100B-120DGE AM29F100B-120DGE1 AM29F100B-120DGI AM29F100B-120DGI1 AM29F100B-120DPC AM29F100B-120DPC1 AM29F100B-120DPE AM29F100B-120DPE1 AM29F100B-120DPI AM29F100B-120DPI1 AM29F100B-120DTC AM29F100B-120DTC1 AM29F100B-120DTE AM29F100B-120DTE1 AM29F100B-120DTI AM29F100B-120DTI1 AM29F100B-120DWC AM29F100B-120DWC1 AM29F100B-120DWE AM29F100B-120DWE1 AM29F100B-120DWI AM29F100B-120DWI1 AM29F100T-120DGC AM29F100T-120DGC1 AM29F100T-120DWI1 AM29F100T-120DGE AM29F100T-120DGE1 AM29F100T-120DGI AM29F100T-120DGI1 AM29F100T-120DPC AM29F100T-120DPC1 AM29F100T-120DPE AM29F100T-120DPE1 AM29F100T-120DPI AM29F100T-120DPI1 AM29F100T-120DTC AM29F100T-120DTC1 AM29F100T-120DTE AM29F100T-120DTE1 AM29F100T-120DTI AM29F100T-120DTI1 AM29F100T-120DWC AM29F100T-120DWC1 AM29F100T-120DWE AM29F100T-120DWE1 AM29F100T-120DWI AM29F100B-120DGI1B
OCR Text 1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory--Die Revision 1 DISTINCTIVE CHARACTERISTICS s Single power supply operation -- 5.0 V 10% for read, erase, and program operations -- Simplifies system-le...
Description 1 megabit CMOS 5.0 volt-only, boot sector flash memory
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory-Die Revision 1
Hex Inverters 14-VQFN -40 to 85
1兆位28x 8-Bit/64x 16位).0伏的CMOS只,引导扇区快闪记忆体模修订1
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC47
1 Megabit (128 K x 8-Bit/64 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory-Die Revision 1 1兆位28亩x 8-Bit/64亩x 16位).0伏的CMOS只,引导扇区快闪记忆体模修订1
Hex Inverters 14-TSSOP -40 to 85 1兆位28亩x 8-Bit/64亩x 16位).0伏的CMOS只,引导扇区快闪记忆体模修订1

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    AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 AM29F200AB-120DGE AM29F200AB-120DGE1 AM29F200AB-120DGI AM29F200AB-120DG

AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
Part No. AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 AM29F200AB-120DGE AM29F200AB-120DGE1 AM29F200AB-120DGI AM29F200AB-120DGI1 AM29F200AB-120DPC AM29F200AB-120DPC1 AM29F200AB-120DPE AM29F200AB-120DPE1 AM29F200AB-120DPI AM29F200AB-120DPI1 AM29F200AB-120DTC AM29F200AB-120DTC1 AM29F200AB-120DTE AM29F200AB-120DTE1 AM29F200AB-120DTI AM29F200AB-120DTI1 AM29F200AB-120DWC AM29F200AB-120DWC1 AM29F200AB-120DWE AM29F200AB-120DWE1 AM29F200AB-120DWI AM29F200AB-120DWI1 AM29F200AB-90DGC AM29F200AT-90DGC AM29F200AT-90DGC1 AM29F200AT-90DGE AM29F200AT-90DGE1 AM29F200AT-90DGI AM29F200AT-90DGI1 AM29F200AT-90DPC AM29F200AT-90DPC1 AM29F200AT-90DPE AM29F200AT-90DPE1 AM29F200AT-90DPI AM29F200AT-90DPI1 AM29F200AT-90DTC AM29F200AT-90DTC1 AM29F200AT-90DTE AM29F200AT-90DTE1 AM29F200AT-90DTI AM29F200AT-90DTI1 AM29F200AT-90DWC AM29F200AT-90DWC1 AM29F200AT-90DWE AM29F200AT-90DWE1 AM29F200AT-90DWI AM29F200AT-90DWI1 AM29F200AT-120DGC AM29F200AB-90DGC1 AM29F200AB-90DGE AM29F200AB-90DGE1 AM29F200AB-90DGI AM29F200AB-90DGI1 AM29F200AB-90DPC AM29F200AB-90DPC1 AM29F200AB-90DPE AM29F200AB-90DPE1 AM29F200AB-90DPI AM29F200AB-90DPI1 AM29F200AB-90DTC AM29F200AB-90DTC1 AM29F200AB-90DTE AM29F200AB-90DTE1 AM29F200AB-90DTI AM29F200A
OCR Text ...ored Flash Memory--Die Revision 1 DISTINCTIVE CHARACTERISTICS s 5.0 V 10% for read and write operations -- Minimizes system level power requirements s High performance -- 90 or 120 ns access time s Low power consumption -- 20 mA typical ...
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1
PCB COPPER CLAD 6X9 1/32 2-SIDE
DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修
M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,扇区闪存模修

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