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1N5231B 02205 P3055L CS147 F0515 DUR09A P3055L 2SC1622
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  1.15v-vf Datasheet PDF File

For 1.15v-vf Found Datasheets File :: 4426    Search Time::2.344ms    
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    APT50GF120JRD

ADPOW[Advanced Power Technology]
Part No. APT50GF120JRD
OCR Text ...urrent Total Power Dissipation 1 1 1200 20 75 50 150 100 460 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating an...15V, I C = 40A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 40A, Tj = 125C) Collector C...
Description Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

File Size 51.80K  /  4 Page

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...urrent Total Power Dissipation 1 1 600 20 80 50 160 100 300 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and...15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    DA112S DA112S1 DA108S DA108S1 3538

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. DA112S DA112S1 DA108S DA108S1 3538
OCR Text ... DIGITAL LINE PROTECTION I/O 1 1 I/O 2 2 I/O 3 3 8 REF 1 7 REF 1 6 REF 2 5 REF 2 DESCRIPTION ARRAY of 8 or 12 diodes configured by ...15V DA108S1 DA112S1 Max. 9 12 1.2 2 Unit V V A 2/5 (R) DA108S1 / DA112S1 Fig.1 : Input capac...
Description DIODE ARRAY
From old datasheet system

File Size 50.67K  /  5 Page

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    FDFS6N303

FAIRCHILD[Fairchild Semiconductor]
Part No. FDFS6N303
OCR Text ... @ VGS = 4.5 V. VF < 0.28 V @ 0.1 A VF < 0.42 V @ 3 A VF < 0.50 V @ 6 A. Schottky and MOSFET incorporated into single power surface mount SO...15V 200 4 2 100 f = 1 MHz VGS = 0V 0.3 1 3 Crss 0 0 2 4 6 8 10 12 14 Q g , GAT...
Description N-Channel MOSFET with Schottky Diode

File Size 94.24K  /  5 Page

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    FSAM20SH60A

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FSAM20SH60A
OCR Text ...ring * Inverter power rating of 1.5kW / 100~253 Vac * Isolation rating of 2500Vrms/min. * Very low leakage current due to using ceramic subs...15V VIN = 0V VFM tON tC(ON) tOFF tC(OFF) trr Collector - Emitter Leakage Current ICES VIN = 5V Condi...
Description 16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor
SPMTM (Smart Power Module)

File Size 971.53K  /  17 Page

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    FSAM20SL60

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. FSAM20SL60
OCR Text ...ring * Inverter power rating of 1.5kW / 100~253 Vac * Isolation rating of 2500Vrms/min. * Very low leakage current due to using ceramic subs...15V VIN = 0V VFM tON tC(ON) tOFF tC(OFF) trr VIN = 5V Condition IC = 20A, TJ = 25C IC = 20A, TJ =...
Description SPMTM (Smart Power Module)

File Size 2,355.81K  /  16 Page

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    FSAM20SM60A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. FSAM20SM60A
OCR Text ...ring * Inverter power rating of 1.5kW / 100~253 Vac * Isolation rating of 2500Vrms/min. * Very low leakage current due to using ceramic subs...15V VIN = 0V VFM tON tC(ON) tOFF tC(OFF) trr Collector - Emitter Leakage Current ICES VIN = 5V Condi...
Description 20A, Smart Power Module (SPM)
SPMTM (Smart Power Module)

File Size 2,335.38K  /  16 Page

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    IRF640A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF640A
OCR Text ...V Lower RDS(ON) : 0.144 (Typ.) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 ID = 18 A TO-220 1.Gate 2. Drain 3. Source Absolute M...15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V IRF640A Fig 2. Transfer Characteristics [...
Description Advanced Power MOSFET

File Size 259.33K  /  7 Page

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    BSM75GD120DN2 075D12N2 C67070-A2516-A67

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text ... Pulsed collector current, tp = 1 ms ICpuls 206 150 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 520 W + 150 -55 ... +...15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 150 A 17V 15V 13V 11V 9V 7V ...
Description IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system

File Size 185.11K  /  9 Page

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    CA3272 CA3272A CA3272AM CA3272AQ CA3292A CA3292AM CA3292AQ

INTERSIL[Intersil Corporation]
Part No. CA3272 CA3272A CA3272AM CA3272AQ CA3292A CA3292AM CA3292AQ
OCR Text ...3272A, CA3292A (SOIC) TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 OUT A FAULT IN A IN B ENABLE GND ...15V FAULT Output Voltage, VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Therma...
Description Quad-Gated Inverting Power Drivers with Fault Mode Diagnostic Flag Output

File Size 90.92K  /  10 Page

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