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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
TIM1011-4L
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OCR Text |
10.7GHz to 11.7GHz HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain ... |
Description |
MICROWAVE POWER GaAs FET
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File Size |
145.86K /
4 Page |
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TRIQUINT[TriQuint Semiconductor]
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Part No. |
TGA4817-EPU
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OCR Text |
...hip dimensions: 1.20 x 1.20 x 0.10 mm (0.047 x 0.047 x 0.004 in)
Preliminary Measured Performance
79 76 Differential Zt (dB-Ohm) 73 70 6...7 9 11 Frequency (GHz)
13
15
10.0Gb/s, 231-1 PRBS, IPD = 95 uA RMS
Note: Devices designa... |
Description |
10 Gb/s Wide Dynamic Range TIA 10Gb/s Wide Dynamic Range Differential TIA
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File Size |
407.92K /
9 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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Part No. |
SZP-3026Z
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OCR Text |
...V mA mA 347 14 7 Min. 3000 31.7 10.5 33.2 12.0 26.0 -43 5.1 18 10 0.9 to 2.2 385 2.3 10 12 424 -40 Typ. Max. 3800
Key Specifications
Symbol fO P1dB S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Parameters: Test Conditions, ... |
Description |
3.0-3.8GHz 2W InGaP Amplifier
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File Size |
374.87K /
10 Page |
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SIRENZA[SIRENZA MICRODEVICES]
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Part No. |
SZP-2026Z
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OCR Text |
...5 4.3 12 12 0.85 to 1.4 445 2.1 10 12 495 -42 Typ. Max. 2700
Key Specifications
Symbol fO P1dB S21 Pout IM3 NF IRL ORL Vdet Range Icq IV...7.0 6 -40 to +85 30 28 23 -40 to +150 +150 1000 Unit mA V W C dBm dBm
RFIN 2 VBIAS 1
Bias
Simpl... |
Description |
2.2-2.7GHz 2W InGaP Amplifier
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File Size |
554.59K /
12 Page |
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it Online |
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Price and Availability
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