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100e Datasheet PDF File

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				ON Semiconductor
Part No.	MBR4015LWTG MBR4015LWT
OCR Text	... 10E+0 1.0E+0 TJ = 100C 100e-3 TJ = 100C 100e-3 10E-3 10E-3 TJ = 25C 1.0E-3 1.0E-3 TJ = 25C 0 5.0 10 15 100e-6 VR, REVERSE VOLTAGE (V) 100e-6 0 5.0 10 15 VR,, REVERSE VOLTAGE (VOLTS) VR REVERSE VOLTAGE (V) Fi...
Description	SWITCHMODE Schottky Power Rectifier
File Size	140.75K / 5 Page	View it Online	Download Datasheet

				Powersem GmbH Meder Electronic
Part No.	PSKD100e-12 PSKD100e08 PSKD100e10
OCR Text	100e/08 PSKD 100e/10 PSKD 100e/12 PSKD 100e IFAV VRRM = 104 A = 800-1200V Symbol IFAV IFSM Test Conditions TC = 70C TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine...
Description	Fast Recovery Epitaxial Diode (FRED) Module Fast Recovery Epitaxial Diode Module
File Size	117.74K / 1 Page	View it Online	Download Datasheet

				Suntac Electronic Corp.
Part No.	IRFZ44N
OCR Text	...00 10 VGS = 10V 1 1E-6 10E-6 100e-6 1E-3 10E-3 100e-3 1E+0 10E+0 tp, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability 1000 ID, Drain-to-Source Current (A) 40 35...
Description	N-CHANNEL Power MOSFET
File Size	134.71K / 5 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	C2M0160120D
OCR Text	...onditions: t j 150 c 10e - 3 100e - 3 1 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 drain - sou...
Description	N-Channel Enhancement Mode
File Size	543.16K / 9 Page	View it Online	Download Datasheet

				Cree
Part No.	C5D50065D
OCR Text	...m 4 typical performance 10e-3 100e-3 1 junction to case impedance, z thjc ( o c/w) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 100e-6 1e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 junction to case impedance, z time, t p (s) figure 8. transient t...
Description	Silicon Carbide Schottky Diode
File Size	737.97K / 6 Page	View it Online	Download Datasheet

				Powersem GmbH
Part No.	PSMD100e PSMD100e-06
OCR Text	100e/02 PSMD 100e/04 PSMD 100e/06 PSMD 100e IFAV VRRM = 136 A = 200-600V Symbol IFAV IFSM Test Conditions TC = 70C TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine ...
Description	Fast Recovery Epitaxial Diode (FRED) Module
File Size	117.33K / 1 Page	View it Online	Download Datasheet

				Powersem GmbH
Part No.	PSMD100e-12
OCR Text	100e/08 PSMD 100e/10 PSMD 100e/12 PSMD 100e IFAV VRRM = 104 A = 800-1200V Symbol IFAV IFSM Test Conditions TC = 70C TVJ = 45C VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine...
Description	Fast Recovery Epitaxial Diode (FRED) Module
File Size	117.45K / 1 Page	View it Online	Download Datasheet

				Daesan Electronics Corp. Daesan Electronics Corp...
Part No.	S2D S2J
OCR Text	...forward rectified current at TL=100e Peak forward surge current 8.3ms half sing wave superimposed on rated load (JEDEC method) TL=100e Maximum instantaneous forward voltage at 2.0A Maximum reverse current at rated voltage TA=25E TA=125E VRR...
Description	CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts
File Size	296.74K / 2 Page	View it Online	Download Datasheet

				Cree, Inc
Part No.	C4D20120A
OCR Text	...sient thermal impedance 10e - 3 100e-3 1 0.5 0.3 0.1 0.05 0.02 singlepulse 1e-3 10e - 3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 0.01 singlepulse p t (sec) c4d20120a rev. c 5 a c e d g h b j l m n f p q s t u...
Description	Silicon Carbide Schottky Diode
File Size	475.30K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MC10E111FN MC100e111FN
OCR Text	...sign VBB Output Enable Extended 100e VEE Range of -4.2 to -5.46V 75k Input Pulldown Resistors The device is specifically designed, modeled and produced with low skew as the key goal. Optimal design and layout serve to minimize gate to ga...
Description	1:9 DIFFERENTIAL CLOCK DRIVER
File Size	84.61K / 5 Page	View it Online	Download Datasheet

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