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    MICROSEMI[Microsemi Corporation]
Part No. APT50M50JFLL_04 APT50M50JFLL APT50M50JFLL04
OCR Text ... R = 3 T = 125C J L = 100h tf 80 60 40 20 0 10 V DD G = 333V R = 3 T = 125C J tr and tf (ns) 100 80 60 40 tr L = 100h td(on) 30 50 70 90 110 20 70 90 110 ID (A) FIGURE 15, RISE AND FALL TIME...
Description POWER MOS 7 R FREDFET

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ...0.8 BVCES VGE = 15V RG = 10 L = 100h VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 100 30 TYP 1.8 2.1 5.0 8.0 80 105 25 20 220 140 475 1050 MAX 250 1.0 2.0 2.5 6.0 100 105 135 275 175 0.76 UNITS V A mA V V V nA...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

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    MICROSEMI[Microsemi Corporation]
Part No. APT50M38JLL_04 APT50M38JLL APT50M38JLL04
OCR Text ... R = 5 T = 125C J L = 100h V DD G td(on) and td(off) (ns) tf = 333V R = 5 T = 125C J tr and tf (ns) L = 100h 60 40 20 0 20 td(on) tr 40 60 80 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT ...
Description POWER MOS 7 R MOSFET

File Size 151.88K  /  5 Page

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    MICROSEMI[Microsemi Corporation]
Part No. APT50M38JFLL APT50M38JFLL04
OCR Text ... R = 5 T = 125C J L = 100h V DD G td(on) and td(off) (ns) tf = 333V R = 5 T = 125C J tr and tf (ns) L = 100h 60 40 20 0 20 td(on) tr 40 60 80 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT ...
Description POWER MOS 7 R FREDFET

File Size 153.17K  /  5 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50GT120JRDQ2
OCR Text ...g Energy 44 55 4 5 15V, L = 100h, VCE = 1200V Inductive Switching (25C) VCC = 800V VGE = 15V I C = 50A 150 23 50 215 26 3585 4835 1910 23 50 255 50 3580 6970 2750 A ns RG = 1.0 7 TJ = +25C Turn-on Switching Energy (Diode)...
Description Thunderbolt IGBT

File Size 448.35K  /  9 Page

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    HGTG20N60B3D G20N60B3 G20N60B3D

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Part No. HGTG20N60B3D G20N60B3 G20N60B3D
OCR Text ...8 BVCES, VGE = 15V RG = 10, L = 100h IEC = 20A IEC = 20A, dIEC/dt = 100A/s IEC = 1A, dIEC/dt = 100A/s IGBT Diode VCE = 480V VCE = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC MIN 600 3.0 100 30 TYP 1.8 2.1 5.0 MAX 250 2.0 2.0 2.5 6.0 100 ...
Description 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
3.3V 36-mc CPLD

File Size 176.68K  /  7 Page

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    ADPOW[Advanced Power Technology]
Part No. APT50GN60BG APT50GN60B
OCR Text ...g Energy 44 55 4 5 15V, L = 100h,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 50A 150 6 20 25 230 100 1185 1275 1565 20 25 260 140 1205 1850 2125 A s ns RG ...
Description IGBT

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