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  150mw smd j-fet field-effect t Datasheet PDF File

For 150mw smd j-fet field-effect t Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MTD3N25E MTD3N25E-D

ON Semiconductor
MOtOROLA[Motorola, Inc]
Part No. MtD3N25E MtD3N25E-D
Description tMOS E-FEt Power Field Effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tMOS POWER FEt 3 AMPERES 250 VOLtS RDS(on) = 1.4 OHM

File Size 253.11K  /  10 Page

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    MTV10N100E_D ON2669 MTV10N100E-D

ON Semiconductor
Part No. MtV10N100E_D ON2669 MtV10N100E-D
Description tMOS E-FEt Power Field Effect transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tMOS POWER FEt 10 AMPERES 1000 VOLtS

File Size 268.98K  /  10 Page

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    MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G

ONSEMI[ON Semiconductor]
Part No. MtD10N10EL MtD10N10ELt4 MtD10N10ELt4G
Description tMOS Power FEt
tMOS E-FEt Power Field Effect transistor DPAK for Surface Mount

File Size 93.40K  /  8 Page

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    MTD10N10ELT4G MTD10N10EL06 MTD10N10ELT4 MTD10N10EL

ONSEMI[ON Semiconductor]
Part No. MtD10N10ELt4G MtD10N10EL06 MtD10N10ELt4 MtD10N10EL
Description tMOS E−FEt Power Field Effect transistor DPAK for Surface Mount

File Size 75.42K  /  7 Page

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    MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D

ON Semiconductor
MOtOROLA[Motorola, Inc]
Part No. MtD1N60E MtD1N60E_D ON2473 MtD1N60E-D
Description tMOS E-FEt Power Field Effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tMOS POWER FEt 1.0 AMPERE 600 VOLtS RDS(on) = 8.0 OHM
From old datasheet system

File Size 266.21K  /  10 Page

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    MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D

ON Semiconductor
MOtOROLA[Motorola, Inc]
Part No. MtV6N100E MtV6N100E_D ON2675 MtV6N100E-D
Description tMOS E-FEt Power Field Effect transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tMOS POWER FEt 6.0 AMPERES 1000 VOLtS RDS(on) = 1.5 OHM
From old datasheet system

File Size 262.08K  /  10 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOtOROLA[Motorola, Inc]
Part No. MtD5N25E MtD5N25E_D ON2508 MtD5N25E-D
Description tMOS E-FEt Power Field Effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tMOS POWER FEt 5.0 AMPERES 250 VOLtS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D

ON Semiconductor
MOtOROLA[Motorola, Inc]
Part No. MtV25N50E MtV25N50E_D ON2672 MtV25N50E-D
Description tMOS E-FEt Power Field Effect transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
tMOS POWER FEt 25 AMPERES 500 VOLtS RDS(on) = 0.200 OHM
From old datasheet system

File Size 279.78K  /  10 Page

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    MTD6N10E ON2512 MTD6N10E-D

ON Semiconductor
MOtOROLA[Motorola, Inc]
Part No. MtD6N10E ON2512 MtD6N10E-D
Description tMOS E-FEt Power Field Effect transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
tMOS POWER FEt 6.0 AMPERES 100 VOLtS RDS(on) = 0.400 OHM
From old datasheet system

File Size 211.15K  /  10 Page

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    MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D

ON Semiconductor
Motorola, Inc
Motorola Mobility Holdings, Inc.
Part No. MtP4N80E_D ON2614 ON2613 MtP4N80 MtP4N80E MtP4N80E-D
Description tMOS E-FEt Power Field Effect transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
tMOS POWER FEt 4.0 AMPERES 800 VOLtS RDS(on) = 3.0 OHM tMOS是功率场效应晶体.0安培800伏特的RDSon)\u003d 3.0欧姆

File Size 155.71K  /  8 Page

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For 150mw smd j-fet field-effect t Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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