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    GA100TS120U

IRF[International Rectifier]
Part No. GA100TS120U
OCR Text ...ified P ow er D is s ipation = 170 W S q u a re w a v e : 50 60% of rated v oltage I 25 Id e a l d io d e s 0 0.1 1 10 100 ...200 A IC = 100 A 2.0 40 IC = 50 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 ...
Description    HALF-BRIDGE IGBT INT-A-PAK
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package

File Size 268.82K  /  10 Page

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    GA125TS120U

IRF[International Rectifier]
Part No. GA125TS120U
OCR Text ...mA Forward Transconductance -- 170 -- S VCE = 25V, IC = 125A Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 1200V -- -- ...200 400 600 800 1000 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fi...
Description 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 220.37K  /  10 Page

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    HA8050 HA8050S

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HA8050 HA8050S
OCR Text ...T Cob Min. 25 20 5 100 150 Typ. 170 Max. 1 100 0.5 1 500 10 Unit V V V uA nA V V Test Conditions IC=10uA IC=1mA IE=10uA VCB=20V VEB=6V IC=0....200 D 150~300 E 250-500 HA8050S HSMC Product Specification HI-SINCERITY MICROELECTRONICS C...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 35.62K  /  4 Page

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    IDT7132SA20C IDT7132SA20CB IDT7132SA20F IDT7132SA20FB IDT7132SA20J IDT7132SA20JB IDT7132SA20L48 IDT7132SA20L48B IDT7132S

Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Part No. IDT7132SA20C IDT7132SA20CB IDT7132SA20F IDT7132SA20FB IDT7132SA20J IDT7132SA20JB IDT7132SA20L48 IDT7132SA20L48B IDT7132SA20P IDT7132SA20PB IDT7132SA25C IDT7132SA25CB IDT7132SA25F IDT7132SA25FB IDT7132SA25J IDT7132SA25JB IDT7132SA25L48 IDT7132SA25L48B IDT7132SA25P IDT7132SA25PB IDT7142SA20C IDT7142SA20CB IDT7142SA20F IDT7142SA20FB IDT7142SA20J IDT7142SA20JB IDT7142SA20L48 IDT7142SA20L48B IDT7142SA20P IDT7142SA20PB IDT7142SA25C IDT7142SA25CB IDT7142SA25F IDT7142SA25FB IDT7142SA25J IDT7142SA25JB IDT7142SA25L48 IDT7142SA25L48B IDT7142SA25P IDT7142SA25PB IDT7132SA35C IDT7132SA35CB IDT7132SA35F IDT7132SA35FB IDT7132SA35J IDT7132SA35JB IDT7132SA35L48 IDT7132SA35L48B IDT7132SA35P IDT7132SA35PB IDT7142SA35C IDT7142SA35CB IDT7142SA35F IDT7142SA35FB IDT7142SA35J IDT7142SA35JB IDT7142SA35L48 IDT7142SA35L48B IDT7142SA35P IDT7142SA35PB IDT7132SA55C IDT7132SA55CB IDT7132SA55F IDT7132SA55FB IDT7132SA55J IDT7132SA55JB IDT7132SA55L48 IDT7132SA55L48B IDT7132SA55P IDT7132SA55PB IDT7142SA55C IDT7142SA55CB IDT7142SA55F IDT7142SA55FB IDT7142SA55J IDT7142SA55JB IDT7142SA55L48 IDT7142SA55L48B IDT7142SA55P IDT7142SA55PB IDT7132SA IDT7132SA100CB IDT7142SA IDT7142LA IDT7142LA55FB IDT7132SA100C IDT7132SA100FB
OCR Text ...220 110 250 110 220 110 200 110 170 -- -- 30 30 -- -- 65 65 -- -- 1.0 0.2 -- -- 60 60 -- -- 65 45 -- -- 165 125 -- -- 15 5 -- -- 155 115 30 30 30 30 65 65 65 65 1.0 0.2 1.0 0.2 60 60 60 60 80 60 65 45 160 125 150 115 30 10 15 5 155 115 145 ...
Description HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 35 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 35 ns, PQCC52
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 35 ns, CDIP48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 25 ns, CQCC48
HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM 2K X 8 DUAL-PORT SRAM, 25 ns, PQCC52

File Size 175.41K  /  11 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...or M3 srew Max. 100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A m...200 Fig 12a. Unclamped Inductive Test Circuit 0 25 50 75 100 125 150 175 V (B R )D S S tp ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...r 10 seconds Max. 41 29 160 170 3.8 1.1 0.025 20 230 41 17 5.5 -55 to + 175 300 (1.6mm from case) Units A W W/C V mJ A mJ V/ns C ...200 100 0 VDD = 50V 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...057 4.6 --- --- --- --- --- --- 170 44 62 13 190 130 110 4.5 7.5 5480 1210 280 5210 900 1500 Max. Units Conditions --- V VGS = 0V, ID = 2...200 VGS = 20V nA -200 VGS = -20V 260 ID = 101A 66 nC VDS = 44V 93 VGS = 10V --- VDD = 38V --- ID = 1...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...057 4.6 --- --- --- --- --- --- 170 44 62 13 190 130 110 4.5 7.5 5480 1210 280 5210 900 1500 Max. Units Conditions --- V VGS = 0V, ID = 2...200 VGS = 20V nA -200 VGS = -20V 260 ID = 101A 66 nC VDS = 44V 93 VGS = 10V --- VDD = 38V --- ID = 1...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...5C, IS = 78A, VGS = 0VT --- 110 170 ns TJ = 25C, IF = 78A --- 390 590 nC di/dt = 100A/s TX Intrinsic turn-on time is negligible (turn-on is ...200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitanc...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...5C, IS = 78A, VGS = 0VT --- 110 170 ns TJ = 25C, IF = 78A --- 390 590 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is d...200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitanc...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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