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1N60S 115HML M62241FP 00250 BRA32C5 V212S MIC9409X TFP70N06
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  2.645 Datasheet PDF File

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    TOSHIBA
Part No. SSM6N40TU
OCR Text ...ions ? 4 v drive ? n-ch 2-in-1 ? low on-resistance: r on = 182m ? (max) (@v gs = 4 v) r on = 122m ? (max) (@v gs = 10 v...645 mm 2 ) unit: mm 0.3-0.05 6 1.70.1 2.10.1 1.30.1 1 2 0.65 0.65 3 2.00.1 5 4 0.70.05 +0.1 0....
Description Small-signal MOSFET 2 in 1

File Size 219.12K  /  7 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STTH8L06 STTH8L06G STTH8L06G-TR STTH8L06DIRG
OCR Text 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) VRRM IR (max) Tj VF (typ) trr (typ) FEATURES AND BENEFITS...645 9.00 9.30 0.354 0.366 3 3.20 0.118 0.126 REF. A H B Dia L6 L2 L3 L5 D F1 L4 L7 F G1 G ...
Description TURBO2 ULTRAFAST HIGH VOLTAGE RECTIFIER
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

File Size 109.01K  /  8 Page

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    TPCP8510

Toshiba Semiconductor
Part No. TPCP8510
OCR Text ...high-speed switching: t f = 0.2 s (typ) absolute maximum ratings (ta = 25c) characteristic symbol rating unit collector-base vo...645 mm 2 ) note 3: using continuously under heavy loads (e.g. t he application of high temperature...
Description Transistor Silicon NPN Epitaxial Type

File Size 207.00K  /  5 Page

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    TOSHIBA
Part No. TPCP8510
OCR Text ...high-speed switching: t f = 0.2 s (typ) absolute maximum ratings (ta = 25c) characteristic symbol rating unit collector-base volt...645 mm 2 ) note 3: using continuously under heavy loads (e.g. t he application of high temperature...
Description Power transistor for high-speed switching applications

File Size 207.89K  /  5 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SC5810
OCR Text 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe App...645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter...
Description TOSHIBA Transistor Silicon NPN Epitaxial Type

File Size 130.72K  /  5 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SC5819
OCR Text 2SC5819 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5819 High-Speed Switching Applications DC-DC Converter Applications * * * Hig...645 mm ) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 124.17K  /  6 Page

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    SSM6J213FE

Toshiba Semiconductor
Part No. SSM6J213FE
OCR Text ...n) = 133 m ? (max) (@v gs = -2.5 v) r ds(on) = 103 m ? (max) (@v gs = -4.5 v) absolute maximum ratings (ta = 25c) characteris...645 mm 2 ) marking (top view) equivalent circuit unit: mm jedec D jeita ...
Description    TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
Small-signal MOSFET

File Size 214.47K  /  6 Page

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    LN1251CALTR LN1261CALTR LN1271RTR LN1371GTR LN2162C13TR LN1251CTR LN1261CTR LN1271RALTR LN1271RALTRP LN1451CTR LN1461CTR

PANASONIC[Panasonic Semiconductor]
Part No. LN1251CALTR LN1261CALTR LN1271RTR LN1371GTR LN2162C13TR LN1251CTR LN1261CTR LN1271RALTR LN1271RALTRP LN1451CTR LN1461CTR LN1471SYTR LN1471SYTRP LN1471YTR LN1871SRTR LN1871SRTRP LN1871Y5TR LN1871Y5TRP LNJ306G5UUX LNJ951C4BRA LLNNJJ431122KG8843RRAA LN1351CTR LN1361CTR LN1371GTRP LN1371SGTR LN1371SGTRP LN1851CTR LN1861CTR LN2162C68TR LNJ010X6FRA LNJ012X8BRA LNJ012XXXX LNJ026X8BRA LNJ107W5ARA1 LNJ107W5PRW LNJ115W86RA LNJ115W88RA LNJ115W89RA LNJ115W8ARA LNJ115W8HRA LNJ115W8PRA LNJ115W8VRA LNJ121W84RA LNJ123W8PRZ LNJ206R5ARA LNJ206R5AUX LNJ206R5RRX LNJ206R5RUX LNJ206XXXX LNJ208R82RA LNJ208R8ARA LNJ208XXXX LNJ210C62RA LNJ210C6ARA LNJ210C6RRA LNJ211R82RA LNJ211R8ARA LNJ211R8ARU LNJ212R82RA LNJ212R8ARA LNJ212XXXX LNJ214R82RA LNJ214R8ARA LNJ214XXXX LNJ216C82RA LNJ216C8ARA LNJ216C8ARU LNJ218C82RA LNJ218C8ARA LNJ218C8ARU LNJ219R9ARA LNJ219XXXX LNJ306G5PRX LNJ306G5PUX LNJ306G5TR02 LNJ306G5TUWQ LNJ306G5URA LNJ306XXXX LNJ308G83RA LNJ308G84RA LNJ308G8LRA LNJ308G8PRA LNJ308G8TRA LNJ308XXXX LNJ310C63RA LNJ310C64RA LNJ310C6PRA LNJ310M6URA LNJ311G83RA LNJ311G8PRA LNJ311G8TRA LNJ311G8TRU LNJ312G8LRA LNJ312G8TRA LNJ312XXXX LNJ314G83RA LNJ314G8TRA LNJ314XXXX LNJ316C83RA LNJ316C83RU LNJ316C84RA LNJ316C8PR
OCR Text ...the surface of the LED. Fig. 2 -- 0603 (1608) Leadless-SS Type 1.6 1 2 1. Anode 2. Cathode (P591CT-ND) 2 1. Anode 2. Cathode (P592CT-N...645 P11466CT-ND .31 .29 .27 32 17 10 2.03 2.5 630 P11467CT-ND .31 .29 .27 30 16 10 1.95 2.5 620 P114...
Description    Surface Mount LEDs

File Size 102.16K  /  3 Page

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    SSM3K128TU

Toshiba Semiconductor
Part No. SSM3K128TU
OCR Text 2. source 3. drain toshiba field-effect transistor silicon n-channel mos type ssm3k128tu high-speed switching applications ...645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition...
Description Field Effect Transistor

File Size 199.19K  /  6 Page

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    SSM3K01T

Toshiba Semiconductor
Part No. SSM3K01T
OCR Text ... V) : Ron = 150 m (max) (@VGS = 2.5 V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA) Unit: mm Maximum Ratings (Ta...645 mm , t = 10 s) Note2: The pulse width limited by max channel temperature. Weight: 10 mg (typ....
Description 3200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications

File Size 151.35K  /  5 Page

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