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  2004-018-a Datasheet PDF File

For 2004-018-a Found Datasheets File :: 1234    Search Time::3.187ms    
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    K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 K4S643232H-TC_L55 K4S643232H-TC_L60 K4S643232H-TC_L70 K4S643232H-TC50 K4S643232H-TC55 K4S643232H-TC60 K4S643232H-TL50 K4S643232H-TL55 K4S643232H-TL60 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70
OCR Text 2004 *Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 February. 2004 SDR...018~0.030 11.760.20 0.4630.008 10.16 0.400 SDRAM 64Mb H-die (x32) FUNCTIONAL BLOCK DIAGRAM...
Description 64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
   64Mb H-die (x32) SDRAM Specification

File Size 115.81K  /  12 Page

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    NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G NTD110N02R-001 NTD110N02R-001G

ONSEMI[ON Semiconductor]
Part No. NTD110N02R NTD110N02RG NTD110N02RT4 NTD110N02RT4G NTD110N02R-001 NTD110N02R-001G
OCR Text ...tor Components Industries, LLC, 2004 1 December, 2004 - Rev. 6 NTD110N02R ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise no...018 0.024 0.033 0.045 0.018 0.023 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- ...
Description Power MOSFET 12.5 A, 24 V, 0.0062 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK

File Size 64.15K  /  8 Page

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    NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD23N03RT4 NTD23N03RT4G NTD23N03R-001

ONSEMI[ON Semiconductor]
Part No. NTD23N03R NTD23N03R-1 NTD23N03R-1G NTD23N03RG NTD23N03RT4 NTD23N03RT4G NTD23N03R-001
OCR Text ...tor Components Industries, LLC, 2004 1 August, 2004 - Rev. 4 Publication Order Number: NTD23N03R/D NTD23N03R ELECTRICAL CHARACT...018 0.024 0.033 0.045 0.018 0.023 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- ...
Description Power MOSFET 23A, 25V, N-Channel DPAK
23 Amps / 25 Volts / N-Channel DPAK
23 Amps, 25 Volts, N−Channel DPAK
23 Amps, 25 Volts, N-Channel DPAK

File Size 64.07K  /  8 Page

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    NTD30N02 NTD30N02T4

ONSEMI[ON Semiconductor]
Part No. NTD30N02 NTD30N02T4
OCR Text ...tor Components Industries, LLC, 2004 1 March, 2004 - Rev. 2 NTD30N02 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) ...018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.04...
Description Power MOSFET 30 Amps / 24 Volts
Power MOSFET 30 Amps, 24 Volts

File Size 53.47K  /  6 Page

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    NTD60N02R NTD60N02R-001 NTD60N02R-032 NTD60N02R-032G NTD60N02R-1G NTD60N02RG NTD60N02RT4 NTD60N02RT4G

JFETs
ONSEMI[ON Semiconductor]
Part No. NTD60N02R NTD60N02R-001 NTD60N02R-032 NTD60N02R-032G NTD60N02R-1G NTD60N02RG NTD60N02RT4 NTD60N02RT4G
OCR Text ...tor Components Industries, LLC, 2004 1 December, 2004 - Rev. 10 NTD60N02R ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise no...018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.04...
Description Power MOSFET 62 A, 24 V, N&#8722;Channel, DPAK 32 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 62 A, 24 V, N&#8722;Channel, DPAK 32 A, 24 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 62 A, 24 V, N−Channel, DPAK
Power MOSFET 62 A / 24 V / N-Channel / DPAK
Power MOSFET 62 A, 24 V, N-Channel, DPAK

File Size 81.59K  /  8 Page

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    NTD80N02 NTD80N02G NTD80N02T4 NTD80N02T4G NTD80N02-001 NTD80N02-032 NTD80N02-032G NTD80N02-1G

ONSEMI[ON Semiconductor]
Part No. NTD80N02 NTD80N02G NTD80N02T4 NTD80N02T4G NTD80N02-001 NTD80N02-032 NTD80N02-032G NTD80N02-1G
OCR Text ...tor Components Industries, LLC, 2004 1 December, 2004 - Rev. 4 YWW 80 N02 2 Drain Y WW 80N02 ORDERING INFORMATION NTD80N02 E...018 0.024 0.033 0.045 0.018 0.023 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- ...
Description SHUNT 80 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK

File Size 82.75K  /  8 Page

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    STG3699 STG3699QTR STG3699TTR

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STG3699 STG3699QTR STG3699TTR
OCR Text ...OP and QFN3x3mm package. May 2004 Rev. 3 1/12 STG3699 Figure 1: Input Equivalent Circuit Table 1: Pin Description TSSOP PIN N ...018 0.024 1 TYP MAX. 1.2 0.15 1.05 0.30 0.20 5.1 6.6 4.48 0.002 0.031 0.007 0.004 0.193 0.244 0.169 ...
Description LOW VOLTAGE 0.5 OHM MAX QUAD SPD SWITCH WITH BREAK BEFORE MAKE FEATURE
LOW VOLTAGE 0.5 MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
LOW VOLTAGE 0.5з MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE
LOW VOLTAGE 0.5?/a> MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

File Size 171.36K  /  12 Page

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    AG402-89 AG402-89G AG402-89PCB

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
WJ Communications
Part No. AG402-89 AG402-89G AG402-89PCB
OCR Text ...b site: www.wj.com September 2004 AG402-89 InGaP HBT Gain Block Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB ...018 F L1 RF Choke RF IN AG402-89 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT Recommended C...
Description Contact Gender:Pin; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:17-55 RoHS Compliant: No
LJT 55C 55#22D SKT WALL RECP
Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:17-35 RoHS Compliant: No
AG402-89 InGaP HBT Gain Block

File Size 246.63K  /  6 Page

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    K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P
OCR Text ...nary 1.5 1.6 1.7 Jan. 27. 2004 Apr. 24. 2004 May. 19. 2004 The attached data sheets are prepared and approved by SAMSUNG Electronic...018~0.030 ( 0.50 ) 0.020 4 +0.003 0.005-0.001 1.20 0.047MAX K9W4G08U1M K9K2G08Q0M K9K...
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

File Size 637.45K  /  40 Page

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    K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M
OCR Text ...liminary 0.4 0.5 Jan. 27. 2004 May.31. 2004 Preliminary The attached data sheets are prepared and approved by SAMSUNG Electronic...018~0.030 ( 0.50 ) 0.020 3 +0.003 0.005-0.001 1.20 0.047MAX K9W8G08U1M K9K4G08Q0M K9K...
Description 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

File Size 597.69K  /  38 Page

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