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  2110-2170 Datasheet PDF File

For 2110-2170 Found Datasheets File :: 1365    Search Time::2.156ms    
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    A2T21H410-24S A2T21H410-24SR6

NXP Semiconductors
Part No. A2T21H410-24S A2T21H410-24SR6
OCR Text ...covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 600 ma, v gsb =0.4vdc,p out = 72 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 420.03K  /  16 Page

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    MRF21030LR3 MRF21030LSR3

Motorola, Inc.
Part No. MRF21030LR3 MRF21030LSR3
OCR Text ... = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MH...
Description RF Power Field Effect Transistors

File Size 577.06K  /  8 Page

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    A2T21H360-24SR6

NXP Semiconductors
Part No. A2T21H360-24SR6
OCR Text ...covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 500 ma, v gsb =0.5vdc,p out = 63 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 497.43K  /  16 Page

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    A2T21H360-23N A2T21H360-23NR6

NXP Semiconductors
Part No. A2T21H360-23N A2T21H360-23NR6
OCR Text ...covering the frequency range of 2110 to 2200 mhz. 2100 mhz ? typical doherty single--carrier w--cdma characterization performance: v dd =28v...2170 mhz 16.7 49.0 7.9 ?32.8 2200 mhz 16.3 47.2 7.9 ?36.1 features ? advanced high performance in--p...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 476.97K  /  17 Page

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    A2T21H141W24SR3

NXP Semiconductors
Part No. A2T21H141W24SR3
OCR Text ...overing the fr equency range of 2110 to 2200 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 400 m...2170 mhz 17.3 49.6 7.0 ?33.0 2200 mhz 17.2 48.2 7.0 ?34.1 features ? advanced high performance in--p...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 343.17K  /  10 Page

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    A2T21H140-24SR3

NXP Semiconductors
Part No. A2T21H140-24SR3
OCR Text ...covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 350 ma, v gsb =0.5vdc,p out = 36 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 391.89K  /  16 Page

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    PTFA212401E PTFA212401F

Infineon Technologies AG
Part No. PTFA212401E PTFA212401F
OCR Text 2110 - 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and ther...
Description Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz

File Size 485.68K  /  11 Page

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    SPA-1318

Stanford Microdevices
Part No. SPA-1318
OCR Text ...MHz dB m dB dB m mA C/W Min. 2110 Typ. Max. 2170 29.5 11.5 1.4:1 48.0 320 40 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissi...
Description 2150 MHz 1 Watt Power Amplifier with Active Bias

File Size 219.37K  /  6 Page

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    A2T21H100-25S A2T21H100-25SR3

NXP Semiconductors
Part No. A2T21H100-25S A2T21H100-25SR3
OCR Text ...covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 250 ma, v gsb =0.2vdc,p out = 18 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency...
Description N--Channel Enhancement--Mode Lateral MOSFET

File Size 479.23K  /  16 Page

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    MMRF2006N MMRF2006NT1

NXP Semiconductors
Part No. MMRF2006N MMRF2006NT1
OCR Text ... (%) output par (db) acpr (dbc) 2110 mhz 32.6 16.8 7.7 --51.3 2140 mhz 32.6 17.0 7.6 --51.4 2170 mhz 32.4 17.0 7.5 --51.6 ? capable of handling 10:1 vswr @ 32 vdc, 2140 mhz, p out =33w cw (3 db input overdrive from rated p out ) ? typical p...
Description RF LDMOS Wideband Integrated Power Amplifier

File Size 756.63K  /  18 Page

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