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SIEMENS AG
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| Part No. |
SKA06N60
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| OCR Text |
...ses 0a 3a 6a 9a 12a 15a 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 0.0mj 0.2mj 0.4mj 0.6mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switchi... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
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| File Size |
235.00K /
13 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SKB15N60
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| OCR Text |
...10a 15a 20a 25a 30a 35a 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj 1.2mj 1.4mj 1.6mj 1.8mj e on * e off e ts * e , switching energy losses 0 ? 20 ? 40 ? 60 ? 80 ? 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj 1.0mj 1.2mj 1.4mj e ts * e on * e off i c , collecto... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
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| File Size |
302.43K /
14 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SGB15N120
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| OCR Text |
...ses 0a 10a 20a 30a 40a 50 a 0mj 2mj 4mj 6mj 8mj 10mj 12mj 14mj e on * e off e ts * e , switching energy losses 0 ? 25 ? 50 ? 75 ? 0mj 1mj 2mj 3mj 4mj 5mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical ... |
| Description |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
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| File Size |
415.74K /
12 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231
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| OCR Text |
...
0.4mJ
0.4mJ E on * E off 0.2mj
E off E on *
0.2mj
0.0mJ 0A
3A
6A
9A
12A
15A
0.0mJ 0
50
100
150
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (... |
| Description |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
266.40K /
13 Page |
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it Online |
Download Datasheet |
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Infineon Technologies AG
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| Part No. |
SGB10N60A07
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| OCR Text |
... 0a 5a 10a 15a 20a 25a 0,0mj 0,2mj 0,4mj 0,6mj 0,8mj 1,0mj 1,2mj 1,4mj 1,6mj e on * e off e ts * e , switching energy losses 0 ? 20 ? 40 ? 60 ? 80 ? 0,2mj 0,4mj 0,6mj 0,8mj 1,0mj e ts * e on * e off i c , collector current r g ... |
| Description |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
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| File Size |
788.53K /
11 Page |
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it Online |
Download Datasheet |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
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| OCR Text |
...LOSSES
10mJ 8mJ Eon* 6mJ 4mJ 2mj 0mJ 0A
E, SWITCHING ENERGY LOSSES
Ets*
Ets* 4mJ
3mJ Eon* 2mj Eoff
Eoff
1mJ
10A
20A
30A
40A
50A
0mJ 0
25
50
75
IC, COLLECTOR CURRENT Figure 13. Typical switc... |
| Description |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
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| File Size |
448.47K /
12 Page |
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it Online |
Download Datasheet |
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