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SONY
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Part No. |
CXG7002FN
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OCR Text |
...ock> supply voltage v dd 2.7 to 3.3 v <power amplifier block> gain control voltage vp ctl to v dd ? 1.0 v <switch block> control voltage ...40 ?35 ?30 ?25 ?20 ?15 ?10 ?70 ?65 ?60 ?55 ?50 ?45 ?40 ?5 0 5 10 15 20 25 gp, acpr600khz vs. vp ctl ... |
Description |
Power Amplifier, Switch and LNA/Mixer
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File Size |
121.03K /
9 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
BFP540ESD
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OCR Text |
...observe handling precaution!
3 4 1
2
Type BFP540ESD
Maximum Ratings Parameter
Marking AUs 1=B
Pin Configuration 2=E 3=C 4=E
...40 50 60 70 80 0 10 20 30 40
C
50
60
70
80
90
100
I [mA]
I [mA]
Power ga... |
Description |
NPN Silicon RF Transistor
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File Size |
224.54K /
9 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0913A
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OCR Text |
... 29.5 11 -
Limits
Typ. 550 -3 200 31 48 13 2.0 20 Max. 800 -5 30
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above param...40 30 20 10
VD=10V ID=200mA f1=1.90GHz f2=1.91GHz
0
Po
-10 -20 -30 -40
Po(SCL) (dBm)
... |
Description |
L & S BAND GaAs FET [ SMD non - matched ]
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File Size |
43.80K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0915A_03 MGF0915A MGF0915A03
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OCR Text |
....0 13.0 -
Limits
Typ. 2400 -3 1000 36.5 50 14.5 5 Max. 3000 -5 8
Unit
mA V mS dBm % dB C/W
*1:Channel to case /
Above paramete...40 35 30 Gp(dB),Po(dBm) 25
PAE VDS=10V ID=0.8A Po
80 70 60 50 40
Gp
f=1.9GHz
20 15 10 5 0... |
Description |
L & S BAND GaAs FET
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File Size |
42.10K /
3 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0917A
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OCR Text |
....876 0.905 0.920
(mag) 4.043 3.628 3.204 2.813 2.480 2.190 1.944 1.755 1.598 1.473 1.381 1.314 1.270 1.251 1.250 1.268 1.310 1.366 1.451 ...40 -48.32 -63.88 -80.99 -99.47 -119.01 -139.19 -159.45 -179.08 170.48 158.33
(dB) 24.93 23.29 22.... |
Description |
L & S BAND GaAs FET [ SMD non matched ] L & S BAND GaAs FET [ SMD non - matched ]
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File Size |
43.54K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0912A
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OCR Text |
...
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
Electrical characteristics
Symbol
IDSS VGS(off) gm Po add GLP Rth(ch-c)
(Ta=25C)
Paramet...40.5 9.5 -
Limits
Typ. -3 41.5 38 10.5 2.3 Max. 10 -5.0 3
Unit
A V S dBm % dB C/W
*1:Chan... |
Description |
L & S BAND GaAs FET
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File Size |
24.00K /
3 Page |
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it Online |
Download Datasheet
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3.40-3.90ghz Found Datasheets File :: 58 Search Time::3.281ms Page :: | 1 | 2 | <3> | 4 | 5 | 6 | |
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