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30-300s Datasheet PDF File

For 30-300s Found Datasheets File :: 10383 Search Time::2.563ms
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				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	... RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 2.0 --- Drain-to-Source Leakage C...300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss w...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...rrent (A) 40 -VDD 10V 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maxim...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... 0 1 10 100 A 0 0 10 20 30 FO R TE S T C IR C U IT S E E FIG U R E 1 3 40 50 60 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage F...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... 0 1 10 100 A 0 0 10 20 30 FO R TE S T C IR C U IT S E E FIG U R E 1 3 40 50 60 A -V D S , D rain-to-S ourc e V oltage (V ) Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fi...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... C U IT S E E FIG U R E 1 3 25 30 35 40 45 A V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Volt...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	...e 1) IRF840B 500 8.0 5.1 32 30 (Note 2) (Note 1) (Note 1) (Note 3) IRFS840B 8.0 5.1 32 320 8.0 13.4 3.5 Units V A A A V mJ A mJ V...300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semico...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	... Max. 8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A W W W/C V mJ A mJ V/ns C Thermal Resista...300s; duty cycle 2%. Uses IRF840LC data and test conditions Starting TJ = 25C, L = 14mH RG =...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655) P-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO...300s, 2% 2) @ VDD = -25V , L 2.3mH , RG = 25 , Peak IL = -18A , Starting TJ = 25C 3) @ ISD -18A ...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...Air Operation - - 0.83 30 oC/W oC/W 5-21 IRF9150 Source to Drain Diode Specifications PARAMETER Continuous Source to Dra...300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	... EAR dv/dt TJ, TSTG Maximum 30 20 7.0 5.8 37 2.8 2.5 1.6 70 4.2 0.25 5.0 -55 to + 150 Units V Pulsed Drain Current Continuous So...300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF9410 100 VGS 15V 10V 7.0V...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

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