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320 400 Datasheet PDF File

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				HITACHI[Hitachi Semiconductor]
Part No.	2SD789
OCR Text	...nce Note: B 100 to 200 C 160 to 320 D 250 to 500 V(BR)EBO I CBO I EBO hFE* 100 -- -- -- E VCE(sat) fT Cob V MHz pF I C = 1 A, IB...400 to 800 2 2SD789 Maximum Collector Dissipation Curve Collector Power Dissipation PC (W) 1....
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	30.04K / 6 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	2SD882S UTC2SD882S
OCR Text	...FE2 RANK RANGE Q 100-200 P 160-320 E 200-400 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-024,A UTC 2SD882S Fig.1 Static characteristics NPN EPITAXIAL SILICON TRANSISTOR Fig.2 Derating curve of safe operating areas 150 12...
Description	NPN EPITAXIAL SILICON TRANSISTOR
File Size	73.22K / 2 Page	View it Online	Download Datasheet

				Motorola Inc Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	4N33 4N29 4N30 4N32 4N31
OCR Text	... F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.30...400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.3...
Description	STANDARD THRU HOLE CASE 730A-04
File Size	286.89K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Diodes, Inc. Diodes Inc. DIODES[Diodes Incorporated]
Part No.	BAT54C-7 BAT54S-7 BAT54A-7 BAT54-7 BAT54 BAT54S BAT54A BAT54C
OCR Text	...3/4 3/4 3/4 3/4 3/4 Max 3/4 240 320 400 500 1000 2.0 10 5.0 Unit V Test Condition IRS = 100mA IF = 0.1mA IF = 1mA IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1.0V, f = 1.0MHz IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100W Forward ...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
File Size	67.16K / 3 Page	View it Online	Download Datasheet

				Won-Top Electronics Co., Ltd.
Part No.	BAT54C-T1 BAT54C-T3 BAT54S-T1 BAT54S-T3 BAT54A-T1 BAT54A-T3 BAT54-T1 BAT54-T3 BAT54
OCR Text	...oltage VF -- -- 240 320 400 500 1000 2.0 10 5.0 mV Reverse Leakage Current Junction Capacitance Reverse Recovery Time IR Cj trr -- -- -- -- -- -- A pF nS BAT54/A/C/S 2 of 3 (c) 2002 Won-Top Electronics...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管
File Size	35.30K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated] Diodes Inc.
Part No.	BAT54CDW BAT54CDW-7 BAT54SDW-7 BAT54ADW BAT54ADW-7 BAT54BRW-7 BAT54TW BAT54TW-7 BAT54BRW BAT54SDW BAT54JW
OCR Text	...3/4 3/4 3/4 3/4 3/4 Max 3/4 240 320 400 500 1000 2.0 10 5.0 Unit V Test Condition IR = 100mA IF = 0.1mA 1mA IF = IF = 10mA IF = 30mA IF = 100mA VR = 25V VR = 1.0V, f = 1.0MHz IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100W Forward V...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Low-Cost, Precision, High-Side Current-Sense Amplifier
File Size	45.33K / 2 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	BAT54CFILM BAT54SFILM BAT54AFILM BAT54FILM 5505 BAT54S BAT54C BAT54A BAT54 BAT54.A.C.S
OCR Text	... 2% Min. Typ. Max. 240 320 400 500 900 1 100 Unit mV VR = 30 V A DYNAMIC CHARACTERISTICS (Tj = 25 C) Symbol C trr Parameters Junction capacitance Reverse recovery time Tests conditions Tj = 25C IF = 10 mA Irr = 1 mA VR ...
Description	SMALL SIGNAL SCHOTTKY DIODE SMALL SIGNAL SCHOTTKY DIODE From old datasheet system
File Size	82.55K / 5 Page	View it Online	Download Datasheet

				Won-Top Electronics Co., Ltd. WTE[Won-Top Electronics]
Part No.	BAT54CW-T1 BAT54CW-T3 BAT54SW-T1 BAT54SW-T3 BAT54AW-T1 BAT54AW-T3 BAT54W-T1 BAT54W-T3 BAT54W
OCR Text	...oltage VF -- -- 240 320 400 500 1000 2.0 10 5.0 mV Reverse Leakage Current Junction Capacitance Reverse Recovery Time IR Cj trr -- -- -- -- -- -- A pF nS BAT54W/AW/CW/SW 2 of 3 (c) 2002 Won-Top Electro...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管
File Size	36.12K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors / Philips Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSERIES
OCR Text	... 1 MHz; VR = 1 V; see Fig.8 240 320 400 500 800 2 5 mV mV mV mV mV A ns PARAMETER CONDITIONS MAX. UNIT Cd Note diode capacitance 10 pF 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer ...
Description	Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Schottky barrier double diodes
File Size	29.07K / 5 Page	View it Online	Download Datasheet

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