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36a Datasheet PDF File

For 36a Found Datasheets File :: 952 Search Time::1.359ms
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				GSI TECHNOLOGY
Part No.	GS832236aB-333
OCR Text	36a(b/d)-400/375/333/250/200/150 2m x 18, 1m x 36 36mb s/dcd sync burst srams 400 mhz ? 150 mhz 2.5 v or 3.3 v v dd 2.5 v or 3.3 v i/o 119 & 165 bga commercial temp industrial temp rev: 1.00a 2/2011 1/39 ? 2011, gsi technology specificat...
Description	1M X 36 CACHE SRAM, 4.5 ns, PBGA119
File Size	604.54K / 39 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD26AN06A011
OCR Text	...nel powertrench ? mosfet 60v, 36a, 26m ? features ?r ds(on) = 20m ? (typ.), v gs = 10v, i d = 36a q g (tot) = 13nc (typ.), v gs = 10v low miller charge low q rr body diode uis capability (single pulse and repetitive pulse) ...
Description	N-Channel PowerTrench? MOSFET 60V, 36a, 26mΩ
File Size	789.55K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD24AN06LA011 FDD24AN06L-F085
OCR Text	...el powertrench ? mo sf et 60v, 36a, 24m ? fea t ures ?r ds( o n) = 20m ? ( t yp.), v gs = 5v , i d = 3 6 a q g (t ot ) = 16nc (typ.), v gs = 5v l ow miller charge low q rr bod y diode uis capability (single pulse and repetiti...
Description	N-Channel Logic Level PowerTrench? MOSFET 60V, 36a, 24mΩ
File Size	554.03K / 8 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSD40P0411
OCR Text	36a , -40v , r ds(on) 30m p-ch enhancement mode power mosfet elektronische bauelemente 2-dec-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d...
Description	-36a , -40V , RDS(ON) 30m P-Ch Enhancement Mode Power MOSFET
File Size	1,555.70K / 4 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSD40P04-20D
OCR Text	36a, -40v, r ds(on) 30m elektronische bauelemente 14-jul-2010 rev.b page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant p...
Description	P-Ch Enhancement Mode Power MOSFET
File Size	412.18K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF5801 IRF5801TR
OCR Text	... ??? 1.3 v t j = 25c, i s = 0.36a, v gs = 0v t rr reverse recovery time ??? 45 ??? ns t j = 25c, i f = 0.36a q rr reverse recoverycharge ??? 54 ??? nc di/dt = 100a/s diode characteristics 1.8 4.8 a static @ t j = 25c (unless ot...
Description	200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	147.25K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5801
OCR Text	...D = 1mA 2.2 VGS = 10V, ID = 0.36a 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(o...
Description	Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）最大值\u003d 2.2ohm，身份证\u003d 0.6A的） Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
File Size	119.47K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPB10N03L IPP10N03L
OCR Text	...state resistance V GS=4.5V, ID=36a V GS=4.5V, ID=36a, SMD version Drain-source on-state resistance4) V GS=10V, ID=36a V GS=10V, ID=36a, SMD version 1Current limited by bondwire ; with an R thJC = 1.4K/W the chip is able to carry I D...
Description	OptiMOS Buck converter series OptiMOS Buck converter series OptiMOS Power MOSFET, 30V, TO-220, RDSon = 9.2mOhm, 73A, LL OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 9.2mOhm, 73A, LL
File Size	451.91K / 8 Page	View it Online	Download Datasheet

For 36a Found Datasheets File :: 952 Search Time::1.359ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |