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Micross Components
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Part No. |
ICE13N65FP
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OCR Text |
...v/dt ruggedness 50 v/ns v ds = 480v, i d = 13a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
748.98K /
4 Page |
View
it Online |
Download Datasheet
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Micross Components
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Part No. |
ICE11N70
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OCR Text |
...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 108 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m... |
Description |
N-Channel Enhancement Mode MOSFET
|
File Size |
761.67K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Micross Components
|
Part No. |
ICE11N70FP
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OCR Text |
...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 108 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 60 ncm m... |
Description |
N-Channel Enhancement Mode MOSFET
|
File Size |
756.33K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Micross Components
|
Part No. |
ICE11N65FP
|
OCR Text |
...v/dt ruggedness 50 v/ns v ds = 480v, i d = 11a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m ... |
Description |
N-Channel Enhancement Mode MOSFET
|
File Size |
746.16K /
4 Page |
View
it Online |
Download Datasheet
|
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Price and Availability
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