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IDT72261 B72205 17483 0SERI BTS442D2 CD54A 17400 3842CMTR
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  500-s sp1 Datasheet PDF File

For 500-s sp1 Found Datasheets File :: 214    Search Time::2.469ms    
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    APTGF30A60T1G

Microsemi Corporation
Part No. APTGF30A60T1G
OCR Text ...= 125C RG = 6.8 Min Typ Max 250 500 2.45 6 400 Typ 1350 193 120 99 10 60 30 12 80 15 32 12 90 21 0.3 mJ 0.8 Max Unit A V V nA Unit pF 1.7...s Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leakage Current DC Forward Curren...
Description Phase leg NPT IGBT Power Module

File Size 309.69K  /  6 Page

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    APTGF30H60T1G

Microsemi Corporation
Part No. APTGF30H60T1G
OCR Text ...v v ce = 600v t j = 125c 500 a t j = 25c 1.7 2.0 2.45 v ce(on) collector emitter on voltage v ge =15v i c = 30a t j = 12...s t j = 125c 485 nc aptgf30h60t1g aptgf30h60t1g ? rev 0 august, 2007 www.mic...
Description Full - Bridge NPT IGBT Power Module

File Size 312.22K  /  6 Page

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    APTM100DA18T1G

Microsemi Corporation
Part No. APTM100DA18T1G
OCR Text ....5mA VGS = 30 V Min Typ Max 100 500 216 5 100 Unit A m V nA 3 180 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on...s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 Unit ...
Description Boost chopper MOSFET Power Module

File Size 141.68K  /  5 Page

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    APTGF90DA60CT1G

MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
Part No. APTGF90DA60CT1G
OCR Text ... 200 300 VCE (V) 400 500 600 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedan...s products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5...
Description 110 A, 600 V, N-CHANNEL IGBT
Boost chopper NPT IGBT SiC Chopper diode

File Size 209.61K  /  5 Page

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    APTM120DA56T1G

http://
Microsemi Corporation
Part No. APTM120DA56T1G
OCR Text ....5mA VGS = 30 V Min Typ Max 100 500 672 5 100 Unit A m V nA 3 560 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on...s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 Unit ...
Description Boost chopper MOSFET Power Module

File Size 142.28K  /  5 Page

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    APTGF75DA120T1G

Microsemi Corporation
Part No. APTGF75DA120T1G
OCR Text ... Max ratings 1200 100 75 150 20 500 150A @ 1200V Unit V August, 2007 1-5 APTGF75DA120T1G - Rev 0 A V W These Devices are sensitive to...s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 60 2.5 3 1.8 265 350 560 2890 ns nC August, 2007 ...
Description Boost chopper NPT IGBT Power Module

File Size 272.62K  /  5 Page

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    APTDF60H601G

Microsemi Corporation
Part No. APTDF60H601G
OCR Text ... TJ = 45C Max ratings 600 92 60 500 A Unit V August, 2007 1-4 APTDF60H601G - Rev 0 Non-Repetitive Forward Surge Current These Devices...s IF = 60A VR = 400V di/dt = 200A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C T...
Description Fast Diode Full Bridge Power Module

File Size 225.96K  /  4 Page

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    APTC60VDAM45T1G

Microsemi Corporation
Part No. APTC60VDAM45T1G
OCR Text ... V, VDS = 0V 40 3 Max 250 500 45 3.9 100 Unit A m V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Cos...s Tj = 125C Tj = 25C Tj = 125C Min 600 Typ Max 25 500 Unit V A A Maximum Reverse Leak...
Description Dual boost chopper Super Junction MOSFET Power Module

File Size 247.87K  /  7 Page

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    APTM100DA40T1G

Microsemi Corporation
Part No. APTM100DA40T1G
OCR Text ....5mA VGS = 30 V Min Typ Max 100 500 480 5 100 Unit A m V nA 3 400 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on...s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 Unit ...
Description Boost chopper MOSFET Power Module

File Size 142.29K  /  5 Page

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    APTM100DA33T1G

Microsemi Corporation
Part No. APTM100DA33T1G
OCR Text ....5mA VGS = 30 V Min Typ Max 100 500 396 5 100 Unit A m V nA 3 330 4 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on...s Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 80C Min 1200 Typ Max 100 500 Unit ...
Description Boost chopper MOSFET Power Module

File Size 142.14K  /  5 Page

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