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Samsung Electronic
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| Part No. |
KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C4000DLJ-5 KM41C4000DLJ-7
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| Description |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
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| File Size |
339.73K /
20 Page |
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it Online |
Download Datasheet
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Hynix Semiconductor
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| Part No. |
HY51V17403HGJ-5 HY51V17403HGJ-6 HY51V17403HGJ-7 HY51V17403HGLJ-5 HY51V17403HGLJ-6 HY51V17403HGLJ-7 HY51V17403HGLT-5 HY51V17403HGLT-6 HY51V17403HGLT-7 HY51V17403HGT-5 HY51V17403HGT-6 HY51V17403HGT-7 HY51VS17403HGLJ-5 HY51VS17403HGLJ-6 HY51VS17403HGLJ-7
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| Description |
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
4,194,304 words x 4 bit EDO RAM, 3.3V, 50ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
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| File Size |
94.62K /
11 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
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| Part No. |
KM48C2100B KM48V2100B KM48C2000B KM48V2000B KM48C2000BSL-5 KM48C2000BSL-7 KM48C2000BSL-6 KM48C2100BSL-5 KM48C2100BSL-6 KM48C2100BSL-7 KM48V2000BSL-5 KM48C2000BKL-5 KM48C2000BKL-6 KM48C2000BKL-7 KM48C2100BKL-5 KM48C2100BKL-6 KM48C2100BKL-7 KM48V2000BKL-5 KM48V2000BKL-6 KM48V2100BKL-5 KM48V2100BKL-6 KM48V2100BKL-7
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| Description |
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
2M x 8bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
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| File Size |
79.12K /
8 Page |
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it Online |
Download Datasheet |
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HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
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| Part No. |
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V18163HGT-5 HY51VS18163HGLJ-5 HY51VS18163HGLT-6 HY51VS18163HGLT-7 HY51V18163HGLJ-6 HY51V18163HGLJ-7 HY51V18163HGLT-5 HY51V18163HGLT-6 HY51V18163HGLT-7 HY51V18163HGLJ-5 HY51VS18163HGJ-6
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| Description |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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| File Size |
105.82K /
12 Page |
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Samsung Electronic
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| Part No. |
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL-6 KM416C254DJL-7 KM416V254DJL-5 KM416V254DJL-6 KM416V254DJL-7
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| Description |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
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| File Size |
839.35K /
36 Page |
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it Online |
Download Datasheet |
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Alliance Semiconductor
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| Part No. |
AS4C14400-70JC AS4C14405-60JC AS4C14405-50TC AS4C14405-70JC AS4C14405-70TC AS4C14405-60TC AS4C14405-50JC AS4C14405-40TC AS4C14405-40JC AS4C14400-70TC AS4C14400-60TC AS4C14400-50TC AS4C14400-50JC AS4C14400-40TC AS4C14400-40JC
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| Description |
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 70ns
1M-bit 4 CMOS DRAM EDO, single 5V power supply, 40ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 60ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 50ns
1M-bit 4 CMOS DRAM fast page mode, single 5V power supply, 40ns
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| File Size |
609.62K /
16 Page |
View
it Online |
Download Datasheet |
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Samsung Electronic
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| Part No. |
KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416C256DLJ-6 KM416V256DLJ-6 KM416V256DLJ-7
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| Description |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
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| File Size |
83.25K /
8 Page |
View
it Online |
Download Datasheet |
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