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  7a 650v Datasheet PDF File

For 7a 650v Found Datasheets File :: 99    Search Time::0.734ms    
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    AOD7N65

Alpha & Omega Semiconductors
Part No. AOD7N65
OCR Text 7a n-channel mosfet general description product summary 750v@150 i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 1.56 w 100% ui...650v, v gs =0v gate drain charge v ds =5v, i d =250 m a v ds =520v, t j =125c i s =1a,v gs =0v v d...
Description 650v,7a N-Channel MOSFET

File Size 385.06K  /  6 Page

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    MTN7N60FP

Cystech Electonics Corp.
Part No. MTN7N60FP
OCR Text ... r ds(on) : 1.2 i d : 7a bv dss : 650v @tj=150 mtn7n60fp description the mtn7n60fp is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, l...
Description N-Channel Enhancement Mode Power MOSFET

File Size 300.58K  /  9 Page

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    SMK0765FJ

KODENSHI KOREA CORP.
Part No. SMK0765FJ
OCR Text ...m e t d(on) v dd =300v, i d =7a r g =25 ? - 18 - ns rise time t r - 19 - turn-off delay time t d(off) - 72 - fall time t f - 28 - total gate charge q g v ds =520v, v gs =10v i d =7a - 21 27 nc gate-source c...
Description SWITCHING REGULATOR APPLICATIONS

File Size 424.41K  /  8 Page

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    H07N65

Hi-Sincerity Mocroelectronics
Part No. H07N65
OCR Text ... c (v dd =50v, v gs =10v, i l =7a, l=10mh, r g =25 ) 530 mj t l maximum lead temperature for soldering purposes, 1/8? from case for 1...650v, v gs =0v) - - 1 ua i dss drain-source leakage current (v ds =650v, v gs =0v, t j =125 o...
Description N-Channel Power Field Effect Transistor

File Size 119.76K  /  6 Page

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    STK0765BF

AUK corp
Part No. STK0765BF
OCR Text ... V V A nA S pF VDD=300V, ID=7a RG=25 - VDS=300V, VGS=10V ID=7a - ns - nC Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Pulsed-source current Forward voltage Reverse ...
Description Advanced Power MOSFET

File Size 392.81K  /  8 Page

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    AOTF7N65 AOT7N65

Alpha & Omega Semiconductors
Part No. AOTF7N65 AOT7N65
OCR Text 7a n-channel mosfet general description product summary v ds i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 1.56 w 100% uis ...650v, v gs =0v m a bv dss maximum body-diode pulsed current input capacitance output capacitance tur...
Description 650v, 7a N-Channel MOSFET

File Size 405.37K  /  6 Page

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    SSFP7N65

GOOD-ARK Electronics
Part No. SSFP7N65
OCR Text ...atability VDSS = 650v ID25 = 7a RDS(ON) = 1.3 Description StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduc...
Description StarMOST Power MOSFET

File Size 122.95K  /  2 Page

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    SMK0765F SMK0765F-1

KODENSHI KOREA CORP.
Part No. SMK0765F SMK0765F-1
OCR Text ...m e t d(on) v dd =300v, i d =7a r g =25 ? ? - 18 - ns rise time t r - 19 - turn-off delay time t d(off) - 72 - fall time t f - 28 - total gate charge q g v ds =520v, v gs =10v i d =7a ? - 21 27 nc gate-source c...
Description SWITCHING REGULATOR APPLICATIONS

File Size 433.65K  /  8 Page

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    AOT7S65 AOB7S65

Alpha & Omega Semiconductors
Part No. AOT7S65 AOB7S65
OCR Text 7a a aa a mos tm power transistor general description product summary v ds @ t j,max 750v i dm 30a r ds(on),max 0.65 w q g...650v, v gs =0v v ds =520v, t j =150c zero gate voltage drain current i d =250 a, v gs =0v, t j =150...
Description 650v 7a a MOS Power Transistor

File Size 299.83K  /  7 Page

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    MJ13080 MJ13081

Inchange Semiconductor Company Limited
Part No. MJ13080 MJ13081
OCR Text ...Time IC= 5A , VCC= 250V; IB1= 0.7a;tp= 30s; VBE(off)= 5V Duty Cycle2.0% 25 100 500 150 50 500 1500 500 ns ns ns ns isc Websitewww.iscsemi.cn 2
Description isc Silicon NPN Power Transistors

File Size 106.19K  /  2 Page

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