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  a 110 Datasheet PDF File

For a 110 Found Datasheets File :: 115369    Search Time::4.703ms    
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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2Sa608 2Sa608N 2SC536N
OCR Text ...typ max (-)0.1 (-)0.1 560* Unit a a Continued on next page. * The 2Sa608N/2SC536N are classified by 1ma hFE as follow Rank hFE F 160 to ...110-8534 JaPaN 10700TS (KOTO) Ta-2543 No.6324-1/4 2Sa608N/2SC536N Continued on preceding page. ...
Description    Low-Frequency General-Purpose amplifier applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose amplifier applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose amplifier applications

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    2SA838

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2Sa838
OCR Text ...100 -10 220 V V MHz dB pF Unit a a *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC -- Ta 500 -30 Ta=25C 450 -25 2Sa838 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100...
Description Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)

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    2SB631 2SB631K 2SD600 2SD600K

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. 2SB631 2SB631K 2SD600 2SD600K
OCR Text ... (-)5 (-)1 (-)2 1 Unit V V V a a W W Tc=25C Tj Tstg 8 150 -55 to +150 C C Electrical Characteristics at Ta = 25C Parameter ...110-8534 JaPaN 91098Ha (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346-1/4 2SB631...
Description NPN Epitaxial Planar Silicon Transistor 100V/120V, 1a Low-Frequency Power amplifier applications
100V/120V/ 1a Low-Frequency Power amplifier applications
100V/120V/ 1a Low-Frequency Power amp applications
PNP/NPN Epitaxial Planar Silicon Transistors
100V/120V, 1a Low-Frequency Power amp applications
PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1a Low-Frequency Power amplifier applications(用于100V/120Va低频功率放大器应用的PNP硅外延平面型晶体

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ... DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF OSC/MIX. It is suitable for a high density surface mount as...110.9 -116.4 5 2SC5004 S-PaRaMETER VCE = 5 V, IC = 1 ma, ZO = 50 FREQUENCY MHz 100.00 200.0...
Description    NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
SC70/&amp;#181;DFN, Single/Dual Low-Voltage, Low-Power &amp;#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...110.0 -119.5 -128.0 -136.6 -145.2 -153.4 -160.8 -167.7 -173.8 179.6 172.5 165.7 160.0 155.4 151.6 14...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ...high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surfac...110.4 -118.3 -127.7 -139.6 -152.7 -168.2 -178.3 -166.7 S12 aNG 153.6 150.6 144.1 136.7 129.8 123...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ... 10 V, IC = 7 ma,f = 1.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...110.6 -111.3 -115.1 -119.2 -121.6 -126.5 5 2SC5011 S-PaRaMETER VCE = 3 V, IC = 3 ma FREQUENC...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ...= 8 V, IC = 7 ma,f = 1.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...110.4 104.1 98.1 92.9 88.9 84.5 80.9 77.7 74.4 71.3 68.1 65.2 62.6 60.0 57.7 54.6 51.0 48.0 46.0 44....
Description HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ...= 6 V, IC = 5 ma,f = 2.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...110.0 -118.3 -126.0 -133.4 -141.4 -147.5 -155.9 -162.3 -169.6 -174.9 -179.5 175.7 169.3 164.4 161.1 ...
Description L BaND, Si, NPN, RF SMaLL SIGNaL TRaNSISTOR
HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...= 3 V, IC = 3 ma,f = 2.0 GHz a a *1 Pulse Measurement; PW 350 s, Duty Cycle 2 % Pulsed. *2 Measured with 3 terminals bridge, Emitter...110 .110 .116 .123 .124 .126 .139 .140 .148 .148 .157 .166 .163 .164 .173 MaG .985 .957 .930 .88...
Description HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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