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				Toshiba Semiconductor
Part No.	TIM0910-5
OCR Text	... VDS= 9V f= 9.5 to 10.5GHz add Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain ...
Description	MICROWAVE SEMICONDUCTOR TECHNICAL DATA
File Size	366.93K / 4 Page	View it Online	Download Datasheet

				Ningbo Foryard Optoelec...
Part No.	FYS-18011GXX-1 FYS-18011GXX-0
OCR Text	add: no.115 qixin road ningbo zhejiang china zip.: 315051 tel: 0086 - 574 - 87927870 87933652 fax:0086 - 574 - 87927917 http://www.foryard.com e - mail:sales@foryard.com description ? 45.00mm (1.8?) single digit numeric display series. ? st...
Description	LED DIGIT DISPLAY
File Size	370.62K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IP2002PBF
OCR Text	...urrent of each iP2002PbF. Then, add the correction temperature from the normalized curves in Figs. 3, 4, 5 or 6 to the TX axis intercept (see procedure no. 2 above) in Fig. 2. When multiple adjustments are required, add all of the temperatu...
Description	Synchronous Buck Multiphase Optimized BGA Power Block Intergrated Power Semiconductors,Drivers&Passives
File Size	473.72K / 12 Page	View it Online	Download Datasheet

				Monolithic Power System...
Part No.	MP2562DQ
OCR Text	...information * for tape & reel, add suffix ?z (e.g. mp2562dq?z). for rohs compliant packaging, add suffix ?lf (e.g. mp2562dq?lf?z) ** for tape & reel, add suffix ?z (e.g. mp2562ds?z). for rohs compliant packaging, add suffix ?lf (e.g. ...
Description	1A, 4MHz, 50V Step-Down Converter
File Size	564.12K / 20 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM1414-5L
OCR Text	... VDS= 9V f= 14.0 to 14.5GHz add IM3 IDS2 Tch Two-Tone Test Po=26.0 dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Tran...
Description	MICROWAVE POWER GaAs FET
File Size	147.27K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Man... ETC List of Unclassifed Manufacturers
Part No.	GVD20433-001 GVD20433-004 GVD30603-001 GVD20435-001 GVD20435-004 GVD1205-001 GVD1205-004 GVD1215-001 GVD1206-001 GVD1206-004 GVD1217-001 GVD30432-001 GVD30432-004 GVD20447-001 GVD20434-001 GVD20434-004 GVD30452-001 GVD30452-004 GVD30442-001 GVD20445-001 GVD20445-004 GVD20443-001 GVD20443-004 GVD1207-001 GVD1207-004 GVD20449-001 GVD1203-001 GVD1203-004 GVD20436-001 GVD20436-004 GVD1210-001 GVD1210-004 GVD30422-001 GVD30422-004 GVD1208-001 GVD1208-004 GVD1214-001 GVD20437-001 GVD1202-001 GVD1202-004 GVD1204-001 GVD1204-004 GVD1209-001 GVD1209-004 GVD1211-001 GVD1212-001 GVD1213-001 GVD1216-001 GVD20450-001 GVD20450-004 GVD30462-001 GVD30462-004 GVD30504-001 GVD30442-004 GVD30503-001 GVD30601-001 GVD30501-001 GVD30502-001 GVD30602-001 GVD20444-001 GVD20444-004 GVD20442-001 GVD20442-004 GVD1401-001 GVD1404-001 GVD20446-001
OCR Text	...style * Available in chip form (add suffix -000) * Low voltage wireless phase locked loop VCOs * Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 A DC (at 25C): 12 V min Maximum reverse leakage current at -10 V (at 25C): 0....
Description	SUPER HYPERABRUPT TUNING VARACTOR DIODES
File Size	216.04K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text	...(before) DNU --> (after) N.C 2. add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. add the specification of Block Lock scheme.(Page 32~...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Eorex Corporation
Part No.	EM42AM1684RTA EM42AM1684RTA-5F EM42AM1684RTA-6F EM42AM1684RTA-75F EM42AM1684RTA-5FE EM42AM1684RTA-75FE EM42AM1684RTA-7FE EM421M1684RTA-5FE EM422M1684RTA-5FE EM424M1684RTA-5FE EM428M1684RTA-5FE EM42BM1684RTA-5FE EM421M1684RTA-7FE EM422M1684RTA-7FE EM424M1684RTA-7FE EM421M1684RTA-75FE EM422M1684RTA-75FE EM428M1684RTA-7FE EM42BM1684RTA-7FE EM428M1684RTA-75FE EM42BM1684RTA-75FE EM424M1684RTA-75FE
OCR Text	... EM42AM1684RTA A0 A1 A2 Row add. Buffer A3 A4 address Register A5 A6 A7 A8 A9 A10 A11 A12 BA0 BA1 Col. add. Buffer Row Decoder DM Memory Array Write DQM Control Data In S/ A & I/ O Gating Col. Decoder Data Out DOi Mode Regis...
Description	256Mb (4M×4Bank×16) Double DATA RATE SDRAM 256Mb (4M?4Bank?16) Double DATA RATE SDRAM 256Mb (4M】4Bank】16) Double DATA RATE SDRAM
File Size	319.01K / 19 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text	...(before) DNU --> (after) N.C 2. add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. add the specification of Block Lock scheme.(Page 32~...
Description	32M x 8 Bit NAND Flash Memory 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

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