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    AO3421 AO342111 AO3421-11

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO3421 AO342111 AO3421-11
OCR Text ...25c unless otherwise noted -30v drain-source voltage -30 t a =70c 20 gate-source voltage t a =70c i d -55 to 150 -2.6 -2.2 -20 1 v power dissipation b p d pulsed drain current c continuous drain current t a =25c w 1.4 t a =25c a maximum j...
Description 30V P-Channel MOSFET

File Size 231.74K  /  5 Page

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    AO3421E

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO3421E
OCR Text ...y protection applications. -30v drain-source voltage -30 v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted sot23 top view bottom view d g s g s d s g d v gs i dm t j , t stg symbol t 10...
Description 30V P-Channel MOSFET

File Size 305.95K  /  5 Page

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    AO3420 AO342011 AO3420-11

Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
Part No. AO3420 AO342011 AO3420-11
OCR Text ...power dissipation b p d pulsed drain current c continuous drain current t a =25c i d absolute maximum ratings t a =25c unless otherwise noted 20v drain-source voltage 20 the ao3420 uses advanced trench technology to provi de excellent r ...
Description 20V N-Channel MOSFET

File Size 225.24K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ9435
OCR Text ... parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 2 4 v continuous drain current* i d 5.1 pulsed drain current i dm 20 continuous source current(diode conduction) * i s -2.6 a ...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 449.98K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ7328
OCR Text ... parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current i d -8 pulsed drain current (note 1) i dm -32 a power dissipation (note 2) p d 1.4 w thermal re...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 1,043.79K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4953
OCR Text ... parameter symbol value unit drain-source voltage v ds -30 gate-source voltage v gs 20 v continuous drain current ( t 10s) i d - 5 a power dissipation ( t 10s) p d 1.25 w thermal resista...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 925.65K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4828
OCR Text ...parameter symbol value units drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t 10s ) (note 1) i d 4.5 a pulsed drain current (note 2) i dm 20 a power dissipation p d 1.25 ...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 898.69K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4822
OCR Text ... parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t 10s ) (note 1) i d 8.5 a pulsed drain current (note 2) i dm 30 a power dissipation p d 1.4 ...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 561.44K  /  2 Page

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    TY Semiconductor Co., Ltd
Part No. CJQ4459
OCR Text ...parameter symbol value units drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current i d -6.5 a pulsed drain current (note 1) i dm -30 a power dissipation (note 2) p d 1.25 w ther...
Description SOP8 Plastic-Encapsulate MOSFETS

File Size 607.79K  /  3 Page

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