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Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
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| Part No. |
AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AMS431LAN AMS431LB AMS431LBL AMS431LBM AMS431LBM1 AMS431LBN AMS431LC AMS431LCL AMS431LCM AMS431LCM1 AMS431LCN
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| Description |
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:40V; Continuous drain current, id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:150V; Continuous drain current, id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:150V; Continuous drain current, id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; drain Source Voltage, Vds:60V; Continuous drain current, id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
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| File Size |
63.66K /
7 Page |
 View
it Online |
Download Datasheet
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Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
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| Part No. |
STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 STBS014 STBS015 STBS016 STBS018 STBS019 STBS020 STBS021 STBS023 STBS026 STBS028 STBS030 STBS033 STBS035 STBS039 STBS042 STBS047 STBS050 STBS053 STBS060 STBS063 STBS068 STBS06H STBS071 STBS075 STBS07A STBS07G STBS082 STBS088 STBS08C STBS08I STBS091 STBS099 STBS09B STBS0B1 STBS0B2 STBS0B3 STBS0B4 STBS0B5 STBS0B8 STBS0B9 STBS0D0 STBS510 STBS511 STBS512 STBS513 STBS514 STBS515 STBS516 STBS518 STBS519 STBS520 STBS521 STBS523 STBS526 STBS528 STBS530 STBS533 STBS535 STBS539 STBS542 STBS547 STBS550 STBS553 STBS556 STBS560 STBS563 STBS568 STBS56H STBS571 STBS575 STBS57A STBS57G STBS582 STBS588 STBS58C STBS58I STBS591 STBS599 STBS59B STBS5B1 STBS5B2 STBS5B3 STBS5B4 STBS5B5 STBS5B8 STBS5B9
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| Description |
SURFACE MOUNT BidIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous drain current, id:1mA; current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous drain current, id:90uA; current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous drain current, id:240uA; current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; current, id cont:0.5A; current, idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
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| File Size |
47.58K /
4 Page |
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it Online |
Download Datasheet |
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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
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| Description |
MOSFET; Transistor Polarity:Dual P Channel; drain Source Voltage, Vds:-30V; Continuous drain current, id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; current, id cont:1.8A; current, idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; drain Source Voltage, Vds:-20V; Continuous drain current, id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; current, id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; current, idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
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| File Size |
125.39K /
17 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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