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53102 TDA7056A DB120K M800H 0G107 MJE13007 TLM825SA EL5196
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    74AUP2G126GT

NXP Semiconductors
Part No. 74AUP2G126GT
OCR Text ... ? c to +125 ? c xson8 plastic extremely thin sm all outline package; no leads; 8 terminals; body 1 ? 1.95 ? 0.5 mm sot833-1 74aup2g126gf ? 40 ? c to +125 ? c xson8 extremely thin small outline package; no leads; 8 terminals; body 1.35...
Description Low-power dual buffer/line driver; 3-state

File Size 299.98K  /  24 Page

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    74LVC2G32GF

NXP Semiconductors
Part No. 74LVC2G32GF
OCR Text ... ? c to +125 ? c xson8 plastic extremely thin small outline package; no leads; 8 terminals; body 1 ? 1.95 ? 0.5 mm sot833-1 74lvc2g32gf ? 40 ? c to +125 ? c xson8 extremely thin small outline package; no leads; 8 terminals; body 1.35 ...
Description Dual 2-input OR gate

File Size 281.65K  /  21 Page

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    Taiwan Semiconductor
Part No. TS39100CW50
OCR Text ... high current output from an extremely small package. this regulator offers e xtremely low dropout (typically 400mv at 1a) and ve ry low ground current (typically 17ma at 1a). the ts39100 are fully protected against ove...
Description Power Management Ics-Linear Voltage Regulator- Ultra Low Dropout Voltage Regulator

File Size 129.61K  /  7 Page

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    IRF7526D1PBF

International Rectifier
Part No. IRF7526D1PBF
OCR Text ...ocessing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide...
Description -30V FETKY - MOSFET and Schottky Diode in a Micro 8 package

File Size 160.16K  /  10 Page

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    IRF7523D1PBF

International Rectifier
Part No. IRF7523D1PBF
OCR Text ...ocessing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide...
Description 30V FETKY - MOSFET and Schottky Diode in a Micro 8 package

File Size 194.91K  /  10 Page

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    IRF7521D1PBF

International Rectifier
Part No. IRF7521D1PBF
OCR Text ...ocessing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide...
Description 20V FETKY - MOSFET and Schottky Diode in a Micro 8 package

File Size 196.84K  /  8 Page

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    List of Unclassifed Man...
Part No. ABL004-00E
OCR Text ...gmr sensors are not damaged by extremely large magnetic fields). the se nsor elements themselves are designed to provide usable output with even the smallest gear teeth. single and double output versions are available; the second outpu...
Description Precision Gear Tooth and Encoder Sensors

File Size 132.51K  /  10 Page

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    ZP Semiconductor
Part No. IRLML5203TRPBF
OCR Text ...ssing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadfra...
Description HEXFETPower MOSFET

File Size 267.00K  /  2 Page

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    IRLML5203PBF IRLML5203PBF-15

International Rectifier
Part No. IRLML5203PBF IRLML5203PBF-15
OCR Text ...ssing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. a thermally enhanced large pad leadfra...
Description Ultra Low On-Resistance

File Size 208.50K  /  10 Page

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    ALD212908 ALD212908APAL ALD212908ASAL ALD212908PAL ALD212908SAL

Advanced Linear Devices
Part No. ALD212908 ALD212908APAL ALD212908ASAL ALD212908PAL ALD212908SAL
OCR Text ...ages can be built to operate at extremely low supply/bias voltage levels. for example, a nanopower input am- plifier stage operating at less than 1.0v supply voltage has been successfully built with these devices. ald212908a epad mosfets fe...
Description PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR

File Size 108.97K  /  12 Page

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