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MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
Advanced Power Technolo...
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| Part No. |
APT8020LLL APT8020B2LL APT8020B2LL_04 APT8020B2LL04 APT8020B2LLG
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
| Description |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 38; RDS(on) (Ohms): 0.2; BVDSS (V): 800;
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
156.54K /
5 Page |
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GE[General Semiconductor]
N.A.
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| Part No. |
GFB75N03
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| OCR Text |
ID 80A
D
TO-263AB
0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.
D
G
0.160 (4.06) 0.190 (4.83)
0.045 (1.14) 0.055 (1.40)
S
...38A VGS = 4.5V, ID = 31A VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS 5V, VGS =... |
| Description |
N-channel Enhancement-mode MOSFET
TRANSISTOR|MOSFET|N-CHANNEL|30VV(BR)DSS|75AI(D)|TO-263AB
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| File Size |
98.61K /
5 Page |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020LFLL APT8020B2FLL
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 38A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = ... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
244.54K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M36JLL_04 APT30M36JLL APT30M36JLL04
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A)
Ohms A nA Volts
7-2004 050-7152 Rev B
Zero Gate Voltage Drain Current (VDS = 300V, VGS =... |
| Description |
POWER MOS 7 R MOSFET
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| File Size |
166.73K /
5 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT30M36JFLL
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| OCR Text |
...
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A)
Ohms A nA Volts
7-2004 050-7158 Rev B
Zero Gate Voltage Drain Current (VDS = 300V, VGS =... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
167.31K /
5 Page |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB6676S FDP6676S FDB6676SS62Z
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| OCR Text |
...imum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25oC un...38A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 38 A
1
1.3 -8.4 4.7 5.2 7.3
3
V mV/... |
| Description |
76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
30V N-Channel PowerTrench SyncFET™
30V N-Channel PowerTrench SyncFET⑩
30V N-Channel PowerTrench SyncFET TM
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| File Size |
110.15K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFPS38N60 IRFPS38N60L
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| OCR Text |
...SMPS VDSS RDS(on) typ. Trr typ. ID * Telecom and Server Power Supplies * Uninterruptible Power Supplies 120m 600V 170ns 38A * Motor Control applications Features and Benefits * SuperFast body diode eliminates the need for external diodes in... |
| Description |
600V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
SMPS MOSFET
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| File Size |
163.43K /
9 Page |
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it Online |
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Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
| Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
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| File Size |
100.91K /
5 Page |
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it Online |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
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| OCR Text |
...g
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...38A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 500V ID = 38A @ 25C RG = 0.6 6 INDUCTIVE SWITCHING @ 2... |
| Description |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
101.61K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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