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15N120A OBC5048A 03QTQ 2SC3978 N101K SE05H 2SA988F 93LC46
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    IRF[International Rectifier]
Part No. IRFD310
OCR Text index Next Data Sheet PD -9.1225 IRFD310 HEXFET(R) Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description Third...
Description Power MOSFET(Vdss=400V/ Rds(on)=3.6ohm/ Id=0.35A)
Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)

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    IRF[International Rectifier]
Part No. IRFI1310G
OCR Text index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Ra...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A)
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)

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    IRF[International Rectifier]
Part No. IRFM260
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1388A REPETITIVE AVALANCHE AND dv/dt RATED IRFM260 N-CHANNEL HEXFET (R) TRANSISTOR 200Volt, 0.060, HEXFET HEXFET technology is the key to International Rectifier...
Description TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)

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IRF[International Rectifier]
Part No. IRFN044
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1545 HEXFET(R) POWER MOSFET 60 Volt, 0.040 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac...
Description POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)

File Size 175.47K  /  6 Page

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IRF[International Rectifier]
Part No. IRFN054
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET(R) POWER MOSFET 60 Volt, 0.020 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a...
Description POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)

File Size 180.33K  /  6 Page

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    IRF[International Rectifier]
Part No. IRFN240
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1548 HEXFET(R) POWER MOSFET 200 Volt, 0.18 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac...
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)

File Size 181.17K  /  6 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFN250
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1549 HEXFET(R) POWER MOSFET 200 Volt, 0.100 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a...
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) 功率MOSFET N沟道BVdss \u003d 200V的电压,的Rds(on)\u003d 0.100ohm,身份证\u003d 27.4A

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFN340
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1550 HEXFET(R) POWER MOSFET 400 Volt, 0.55 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac...
Description POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A) 功率MOSFET N沟道BVdss \u003d00V,的Rds(on)\u003d 0.55ohm,身份证\u003d 10A条)

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    IRF[International Rectifier]
Part No. IRFN350
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.1551 HEXFET(R) POWER MOSFET 400 Volt, 0.315 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a...
Description POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)

File Size 176.61K  /  6 Page

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFN450
OCR Text index Next Data Sheet Provisional Data Sheet No. PD-9.418A HEXFET(R) POWER MOSFET 500 Volt, 0.415 HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a...
Description POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds(on)\u003d 0.415ohm,身份证\u003d 12A条)

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