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IRF[International Rectifier]
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Part No. |
IRFD310
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OCR Text |
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PD -9.1225
IRFD310
HEXFET(R) Power MOSFET
Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements Description
Third... |
Description |
Power MOSFET(Vdss=400V/ Rds(on)=3.6ohm/ Id=0.35A) Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=0.35A)
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File Size |
414.42K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRFI1310G
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OCR Text |
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PD - 9.1222
IRFI1310G
HEXFET(R) Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Ra... |
Description |
Power MOSFET(Vdss=100V/ Rds(on)=0.04ohm/ Id=22A) Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A)
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File Size |
319.89K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRFM260
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OCR Text |
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Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
IRFM260
N-CHANNEL
HEXFET
(R)
TRANSISTOR
200Volt, 0.060, HEXFET
HEXFET technology is the key to International Rectifier... |
Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.060ohm, Id=35A*)
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File Size |
284.37K /
8 Page |
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it Online |
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http:// IRF[International Rectifier]
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Part No. |
IRFN044
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OCR Text |
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Provisional Data Sheet No. PD-9.1545
HEXFET(R) POWER MOSFET
60 Volt, 0.040 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A)
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File Size |
175.47K /
6 Page |
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it Online |
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http:// IRF[International Rectifier]
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Part No. |
IRFN054
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OCR Text |
index
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Provisional Data Sheet No. PD-9.1543A
HEXFET(R) POWER MOSFET
60 Volt, 0.020 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
Description |
POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*)
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File Size |
180.33K /
6 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRFN240
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OCR Text |
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Provisional Data Sheet No. PD-9.1548
HEXFET(R) POWER MOSFET
200 Volt, 0.18 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=18A)
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File Size |
181.17K /
6 Page |
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it Online |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFN250
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OCR Text |
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Provisional Data Sheet No. PD-9.1549
HEXFET(R) POWER MOSFET
200 Volt, 0.100 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
Description |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.100ohm, Id=27.4A) 功率MOSFET N沟道BVdss \u003d 200V的电压,的Rds(on)\u003d 0.100ohm,身份证\u003d 27.4A
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File Size |
180.78K /
6 Page |
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it Online |
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International Rectifier, Corp. IRF[International Rectifier]
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Part No. |
IRFN340
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OCR Text |
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Provisional Data Sheet No. PD-9.1550
HEXFET(R) POWER MOSFET
400 Volt, 0.55 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry ac... |
Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=10A) 功率MOSFET N沟道BVdss \u003d00V,的Rds(on)\u003d 0.55ohm,身份证\u003d 10A条)
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File Size |
175.28K /
6 Page |
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IRF[International Rectifier]
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Part No. |
IRFN350
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OCR Text |
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Provisional Data Sheet No. PD-9.1551
HEXFET(R) POWER MOSFET
400 Volt, 0.315 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
Description |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.315ohm, Id=14A)
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File Size |
176.61K /
6 Page |
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it Online |
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International Rectifier, Corp. IRF[International Rectifier]
|
Part No. |
IRFN450
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OCR Text |
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Provisional Data Sheet No. PD-9.418A
HEXFET(R) POWER MOSFET
500 Volt, 0.415 HEXFET
HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry a... |
Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds(on)\u003d 0.415ohm,身份证\u003d 12A条)
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File Size |
175.61K /
6 Page |
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it Online |
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