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For intrinsic Found Datasheets File :: 6290 Search Time::1.5ms
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				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...oC, ISD = 14A, dISD/dt = 100A/s intrinsic Turn-On Time is Negligible, Turn-On Speed is Substantially Controlled by LS + LD 150 1.6 - 300 3.4 - 1.8 640 7.2 - V ns C - 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repeti...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2804 IRF2804L IRF2804S
OCR Text	...20V di/dt = 100A/s f f intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0....
Description	40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	273.77K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	...--- 290 430 nC di/dt = 100A/s T intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) U Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . V Calculated cont...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AUTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	... --- 410 610 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 370H RG = 25, IAS = 43A, VG...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	... --- 410 610 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a t...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	...5A, VDD = 38V di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) f f S Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting T...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3007
OCR Text	... --- 280 420 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperat...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	146.42K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	... --- 143 215 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 62A. ...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	... --- 143 215 nC di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 138H RG = 25, IAS = 62A. ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...A --- 1.2 1.7 C di/dt = 100A/s intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Use...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

For intrinsic Found Datasheets File :: 6290 Search Time::1.5ms
Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |