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  recovery fast Datasheet PDF File

For recovery fast Found Datasheets File :: 35205    Search Time::2.735ms    
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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...e Forward Voltage Diode Reverse recovery Time Diode Reverse recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 11.5A, diF/dt = 3...fast(R) fastrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM ...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ...rrent Total Capacitance Reverse recovery Time HBAT54, HBAT54A, HBAT54C, HBAT54S HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Forward Current & Forward Voltage 250 Spec. No. : HE6854 Is...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM62

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM6264 HM6264B HM6264BLFP-10 HM6264BLFP-10LT HM6264BLFP-8LT HM6264BLP-10L HM6264BLP-8L HM6264BLSP-10L HM6264BLSP-8L HM6264BLP-XXL HM6264BLSP-XXL HM6264BLFP-XXLT
OCR Text ...f write Write pulse width Write recovery time WE to output in high-Z Data to write time overlap Data hold from write time Output active from end of write Output disable to output in high-Z Symbol t WC t CW t AS t AW t WP t WR t WHZ t DW t D...
Description Low Power SRAMs
IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
64 k SRAM (8-kword x 8-bit)
Data Selectors/Multiplexers 20-LCCC -55 to 125

File Size 74.92K  /  15 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from ca...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 84 59 330 200 1.4 20 50 17 4.0 -55 to + 175 300 (1.6mm from ca...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from ca...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from ca...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...A Diode Forward Voltage Reverse recovery Time Reverse recovery Charge Forward Turn-On Time Min. Typ. Max. Units --- --- --- --- --- --- --- --- 22 15 75 A 360 1.3 33 23 V ns nC Conditions MOSFET symbol showing the integral reverse p...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 100 71 400 170 1.11 20 350 60 17 5.0 -55 to + 175 300 (1.6mm ...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

File Size 97.26K  /  8 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...ive Avalanche Energy Peak Diode recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 174 120 700 200 1.4 20 350 See Fig.12a, 12b, 15, 16 TBD -55 to + 175 300 (1.6mm from case ) ...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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