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rf microwave devices packages Datasheet PDF File

For rf microwave devices packages Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Altera Corporation
Part No.	EPC1064V EPC1213 EPC1441
Description	Configuration devices for ACEX/ APEX/ FLEX & Mercury devices
File Size	207.71K / 28 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EPC1
Description	Configuration devices for ACEX, APEX, FLEX & Mercury devices
File Size	198.36K / 28 Page	View it Online	Download Datasheet

				Altera Corporation
Part No.	EPC1064 EPC1064V EPC1441 EPC1213
Description	Configuration devices for ACEX, APEX, FLEX & Mercury devices
File Size	202.29K / 28 Page	View it Online	Download Datasheet

				Tyco Electronics http://
Part No.	LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005N LVR005NK LVR005NK-2 LVR005NS LVR005NS-2 LVR008N LVR008NK LVR008NK-2 LVR008NS LVR008NS-2 LVR012 LVR012K LVR033K-2 LVR055 LVR055K LVR055S LVR055S-2 LVRL200 LVR033S-2 LVR040 LVRL075 LVRL075S LVRL125 LVRL125S LVRL135 LVRL135S LVR040K LVR200S LVR012S-2 LVR016S-2 LVR012K-2 LVR075S
Description	PolySwitch Resettable devices Line-Voltage-Rated devices
File Size	207.50K / 10 Page	View it Online	Download Datasheet

				CREE POWER
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
Part No.	DG3409DB DG3015DB DG3408DB
Description	Device Orientation-MICRO FOOT packages Device OrientationMICRO FOOT packages Device OrientationMICRO FOOT packages
File Size	10.29K / 1 Page	View it Online	Download Datasheet

				MICROCHIP[Microchip Technology] Microchip Technology, Inc.
Part No.	TC1219 TC1219ECH TC1220ECH TC1220 TC1219ECHTR TC1220ECHTR
Description	The TC1219/1220 are CMOS "charge-pump" voltage converters in ultra-small 6-Pin SOT-23A packages. They invert and/or double an input ... The TC1219/1220 are CMOS "charge-pump" voltage converters in ultra-small 6-Pin SOT-23A packages. They invert and/or double an input voltage which can range from 2.5V to 5.5V. Conversion efficiency is typically >95%. Switching frequenc (TC1220) Switched Capacitor Voltage Converters with Shutdown in SOT packages (TC1219) Switched Capacitor Voltage Converters with Shutdown in SOT packages Switched Capacitor Voltage Converters with Shutdown in SOT packages 开关电容电压转换器与关机采用SOT封装
File Size	479.06K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S BAT721A
Description	Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages. Schottky barrier diodes in small packages
File Size	67.25K / 11 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	NANOSMDM075F
Description	PolySwitch PTC devices / Circuit Protection devices
File Size	55.38K / 1 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	NANOSMDM100
Description	PolySwitch PTC devices / Circuit Protection devices
File Size	55.37K / 1 Page	View it Online	Download Datasheet

For rf microwave devices packages Found Datasheets File :: 150+ Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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