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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...on temperature. (See fig. 11). starting TJ = 25C, L = 0.11mH RG = 25, IAS = 101A. (See Figure 12). ISD 101A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the s...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...ising from 0 to 80% VDSS . R starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. VCalculated continuous current based on maximum a...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...n temperature. (See fig. 11). R starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. U Coss eff. is a fixed capacitance that gives the ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...is rising from 0 to 80% VDSS . starting TJ = 25C, L = 0.21mH Calculated continuous current based on maximum allowable RG = 25, IAS = 85A, VGS=10V (See Figure 12). junction temperature. Package limitation current is 75A. ISD 85A, di/dt ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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