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  t1-e1 Datasheet PDF File

For t1-e1 Found Datasheets File :: 4625    Search Time::1.266ms    
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    SI8402DB-T1-E1 SI8402DB08

Vishay Siliconix
Part No. SI8402DB-t1-e1 SI8402DB08
OCR Text ...dering information: si 8 402db-t1-e1 (lead (p b )-free) n-channel mosfet g d s notes: a. surface mounted on 1" x 1" fr4 board. b. refer to ipc/jedec (j-std-020c), no manual or hand soldering. absolute maximum ratings t a = 25 c, unles...
Description 20-V N-Channel 1.8-V (G-S) MOSFET

File Size 205.32K  /  10 Page

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    CEL[California Eastern Labs]
Part No. UPC3218GV-E1-A UPC3217GV UPC3217GV-E1-A
OCR Text ...c_IN 1 J3 Out1 7 8 R1 T1 R5 C1 R2 C2 R6 C7 C8 J2 C5 C6 R3 C3 C4 R4 T1 R7 R6 R4 R3 R1,R2,R5 C6, C8 U1 Transformer4:1 Coilcraft 0603 10K OHM RES ROHM 0603 13K OHM RES ROHM 0603 240 OHM RES ROHM 0603 191 OHM RES ROHM 0603 0 ...
Description 5 V AGC AMPLIFIER VIDEO AMPLIFIER

File Size 537.26K  /  8 Page

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    OMRON Scientific Technologies, Inc.
Part No. NP70N10KUF-E1-AZ
OCR Text ... dissipation (t a = 25 c) p t1 1.8 w total power dissipation (t c = 25 c) p t2 120 w channel temperature t ch 175 c storage...e1, -e2) of tapi ng depending on the direction of the device. reel side draw-out side marki...
Description 70 A, 100 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, TO-263, MP-25ZK, 3 PIN

File Size 195.86K  /  9 Page

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    NP89N04PUK-E1-AY NP89N04PUK-E2-AY NP89N04PUK-15

Renesas Electronics Corporation
Part No. NP89N04PUK-E1-AY NP89N04PUK-E2-AY NP89N04PUK-15
OCR Text ...wer dissipation (t c = 25c) p t1 147 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 37 a repetitive avalan...
Description MOS FIELD EFFECT TRANSISTOR

File Size 108.09K  /  8 Page

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    NP90N055VUK-E1-AY NP90N055VUK-E2-AY

Renesas Electronics Corporation
Part No. NP90N055VUK-E1-AY NP90N055VUK-E2-AY
OCR Text ...wer dissipation (t c = 25c) p t1 147 w total power dissipation (t a = 25c) p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 33 a repetitive avalan...
Description MOS FIELD EFFECT TRANSISTOR

File Size 106.78K  /  8 Page

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    NP82N10PUF-E1-AY NP82N10PUF-E2-AY

Renesas Electronics Corporation
Part No. NP82N10PUF-E1-AY NP82N10PUF-E2-AY
OCR Text ...er dissipation (t c = 25 c) p t1 150 w total power dissipation (t a = 25 c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg -55 to +175 c single avalanche current ? 2 i as 34 a single avalanche en...
Description MOS FIELD EFFECT TRANSISTOR

File Size 238.76K  /  9 Page

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    NEC, Corp.
Part No. NP110N04PDG-E1-AZ
OCR Text ... dissipation (t a = 25 c) p t1 1.8 w total power dissipation (t c = 25 c) p t2 288 w channel temperature t ch 175 c storage...e1, -e2) of tapi ng depending on the direction of the device. reel side draw-out side marki...
Description 110 A, 40 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB TO-263, MP-25ZP, 3 PIN

File Size 115.27K  /  8 Page

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    NP74N04YUG-E1-AY NP74N04YUG-E2-AY

Renesas Electronics Corporation
Part No. NP74N04YUG-E1-AY NP74N04YUG-E2-AY
OCR Text ...er dissipation (t c = 25 c) p t1 120 w total power dissipation (t a = 25 c) ? 2 p t2 1.0 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? 3 i ar 32 a repetit...
Description MOS FIELD EFFECT TRANSISTOR

File Size 218.52K  /  8 Page

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    NP180N055TUK-E1-AY

Renesas Electronics Corporation
Part No. NP180N055TUK-E1-AY
OCR Text ...wer dissipation (t c = 25c) p t1 348 w total power dissipation (t a = 25c) p t2 1.8 w channel temperature t ch 175 c storage temperature t stg ?55 to 175 c repetitive avalanche current * 2 i ar 66 a repetitive avalan...
Description MOS FIELD EFFECT TRANSISTOR

File Size 106.79K  /  8 Page

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