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  w ch Datasheet PDF File

For w ch Found Datasheets File :: 21916    Search Time::2.297ms    
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    Renesas
Part No. HAT2051T
OCR Text ...nnel dissipation pch note2 0.8 w channel dissipation pch note3 1.2 w channel temperature tch 150 c storage temperature tstg e 55 to + 1...ch ?f(t) = s (t) ? ch ?f ch ?f = 166 c/w, ta = 25 c q g q q w...
Description Transistors>Switching/MOSFETs

File Size 77.59K  /  11 Page

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    Renesas
Part No. H7N0308AB
OCR Text ... dissipation pch note 2 100 w channel to case thermal impedance ch-c 1.25 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1 % 2. value at tc = 25c h7n...
Description Transistors>Switching/MOSFETs

File Size 113.24K  /  11 Page

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    SamHop Microelectronics
Part No. SP8651
OCR Text w a p d c 1.32 -55 to 150 i d units parameter 24 10 60 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristi...ch-a) - transient thermal resistance - c/w 0.0001 mounted on fr-4 board of 1 inch 2 , 1oz r ds (o...
Description Dual N-channel Enhancement Mode Field Effect Transistor

File Size 94.99K  /  7 Page

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    2SK3152

Renesas Electronics Corporation
Part No. 2SK3152
OCR Text ...el dissipation pch note2 25 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, dut...ch ? c(t) = s (t) ? ch ? c ch ? c = 5.0 c/w, tc = 25 c tc ...
Description Silicon N channel MOS FET High Speed Power Switching

File Size 83.15K  /  8 Page

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    Mitsubishi Electric Corporation
Part No. FL7KM-12A
OCR Text ...lation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 10v drive v dss .............................................................
Description Power MOSFETs: FL Series

File Size 62.60K  /  4 Page

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    2SJ130 2SJ130L 2SJ130S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ130 2SJ130L 2SJ130S
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch-c (t) = S (t) * ch-c ch-c = 6.25C/w, TC = 25C PDM Pw 1 D = Pw T 0.01 Pulse t Sho T 100 1m ...
Description Power switching MOSFET
Silicon P-channel MOS FET

File Size 47.28K  /  8 Page

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    2SJ172

HITACHI[Hitachi Semiconductor]
Part No. 2SJ172
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch-c (t) = S (t) * ch-c ch-c = 3.13C/w, TC = 25C PDM Pw 1 D = Pw T 0.03 0.01 10 e 1 0.0 Pu...
Description Silicon P-channel MOS FET

File Size 41.90K  /  7 Page

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    2SJ175

HITACHI[Hitachi Semiconductor]
Part No. 2SJ175
OCR Text ...0 -55 to +150 Unit V V A A A w C C 2 2SJ175 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to ...ch-c (t) = S (t) * ch-c ch-c = 5.0C/w, TC = 25C PDM Pw D = Pw T 0.05 0.03 0.01 10 0.02 ...
Description Silicon P-channel MOS FET

File Size 29.99K  /  5 Page

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    2SJ181 2SJ181L 2SJ181S 2SJ182

HITACHI[Hitachi Semiconductor]
Part No. 2SJ181 2SJ181L 2SJ181S 2SJ182
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1s t ho ...
Description    Silicon P-channel MOS FET

File Size 45.64K  /  10 Page

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    2SJ217

NEC
Hitachi Semiconductor
Part No. 2SJ217
OCR Text ...0 -55 to +150 Unit V V A A A w C C Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakd...ch-c (t) = S (t) * ch-c ch-c = 0.83C/w, TC = 25C PDM Pw T 1m 10 m Pulse width Pw (s) 100 m D = Pw T ...
Description Silicon P-channel MOS FET

File Size 48.19K  /  9 Page

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