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				ADPOW[Advanced Power Technology]
Part No.	APT5014LVR
OCR Text	...x ZJC + TC 050-5581 Rev A Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT5014LVR 100 VGS=7V, ...
Description	POWER MOS V 500V 37A 0.140 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.64K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5015 APT5015BVR
OCR Text	...1 t2 JC 050-5561 Rev C Z SINGLE PULSE 0.001 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-T...
Description	POWER MOS V 500V 32A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.16K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVFR
OCR Text	...1 t2 JC 050-5547 Rev B Z SINGLE PULSE 0.001 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-T...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	62.45K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5017BVR
OCR Text	...1 t2 JC 050-5504 Rev E Z SINGLE PULSE 0.001 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-T...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.07K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017 APT5017SVR
OCR Text	...1 t2 JC 050-5510 Rev D Z SINGLE PULSE 0.001 10-5 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-T...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5019HVR
OCR Text	... TC 0.1 050-5816 Rev B Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT5019HVR 60 ID, DRAIN...
Description	POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BN APT5022BN
OCR Text	...r D = t1/t 050-5008 Rev C Z JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT5020/5022BN 20 VGS=6.5, 7, 8, &10V ID, ...
Description	POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	51.03K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVFR
OCR Text	...0.01 0.005 050-5527 Rev C Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT5020BVFR 50 ID, DRAI...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVR
OCR Text	...0.01 0.005 050-5512 Rev C Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT5020BVR 50 ID, DRAIN...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.88K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020SVFR APT5020
OCR Text	...0.01 0.005 050-5569 Rev B Z 0.001 10-5 JC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10-4 APT5020SVFR 50 ID, DRAI...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	64.36K / 4 Page	View it Online	Download Datasheet

For z-bend Found Datasheets File :: 1467 Search Time::1.812ms
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