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NXP Semiconductors N.V.
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Part No. |
BUK653R4-40C
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OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
172.93K /
14 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BUK654R8-40C
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OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
182.93K /
14 Page |
View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BUK664R6-40C
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OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET
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File Size |
180.45K /
14 Page |
View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BUK754R0-40C
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OCR Text |
1. product profile 1.1 general description standard level gate drive n-channel enhancemen t mode field-effect transistor (fet) in a plastic package using advanced trenchmos te chnology. this product has been designed and qualified to t... |
Description |
N-channel TrenchMOS standard level FET
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File Size |
190.29K /
14 Page |
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it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BUK6E3R4-40C
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OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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File Size |
171.05K /
14 Page |
View
it Online |
Download Datasheet
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NXP Semiconductors N.V.
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Part No. |
BUK6218-40C
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OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the app... |
Description |
N-channel TrenchMOS intermediate level FET 42 A, 40 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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File Size |
184.87K /
14 Page |
View
it Online |
Download Datasheet
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