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BA891 60NT3 10700 BU4812F 5F28A EH5B1 EH5B1 1N4734AW
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  00ns Datasheet PDF File

For 00ns Found Datasheets File :: 169    Search Time::1.609ms    
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    N01L163WN1A

NanoAmp Solutions, Inc.
Part No. N01L163WN1A
OCR Text ...0 40 ns address setup time t as 00ns write recovery time t wr 00ns write to high-z output t whz 20 20 ns data to write time overlap t dw 40 35 ns data hold from write time t dh 00 ns end write to low-z output t ow 510ns (doc# 14-02-011...
Description 1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异

File Size 181.61K  /  10 Page

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    MAXIM INTEGRATED PRODUCTS INC
MAXIM - Dallas Semiconductor
Part No. DS1220AD DS1220AB DS1220AD-200-IND
OCR Text ...90 ns 3 address setup time t aw 00ns write recovery time t wr1 t wr2 0 10 0 10 ns ns 12 13 output high from we t odw 35 35 ns 5 output active from we t oew 5 5ns4 data setup time t ds 40 50 ns 4 data hold time t dh1 t dh2 0 10 0 10 ns ns ...
Description 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24
16k Nonvolatile SRAM

File Size 177.66K  /  9 Page

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    Pyramid Semiconductor, Corp.
Part No. P4C1256L70SNILF P4C1256L55PILF P4C1256L70PCLF P4C1256L70DCLF P4C1256L55SNCLF
OCR Text ...te 50 60 ns address set-up time 00ns write pulse width 40 50 ns address hold time 00ns data valid to end of write 25 30 ns data hold time 0 0 ns write enable to output in high z 25 30 ns output active from end of write 55ns t aw t dw timing...
Description LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDSO28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, PDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 70 ns, CDIP28
LOW POWER 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 55 ns, PDSO28

File Size 113.62K  /  11 Page

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    Unisonic Technologies Co., Ltd.
Part No. N04M1618L1AB-150I
OCR Text ...0 40 ns address setup time t as 00ns write recovery time t wr 00ns write to high-z output t whz 30 15 ns data to write time overlap t dw 50 40 ns data hold from write time t dh 00 ns end write to low-z output t ow 10 5 ns stock no. 23209-...
Description 256K X 16 STANDARD SRAM, 150 ns, PBGA48 6 X 8 MM, BGA-48

File Size 188.32K  /  9 Page

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    N01L1618N1AB2-70I N01L1618N1AB-70I

ON Semiconductor
ST Microelectronics
Part No. N01L1618N1AB2-70I N01L1618N1AB-70I
OCR Text ...0 40 ns address setup time t as 00ns write recovery time t wr 00ns write to high-z output t whz 25 20 ns data to write time overlap t dw 40 35 ns data hold from write time t dh 00 ns end write to low-z output t ow 10 10 ns (doc# 14-02-0...
Description 64K X 16 STANDARD SRAM, 70 ns, PBGA48 GREEN, BGA-48
64K X 16 STANDARD SRAM, 70 ns, PBGA48 BGA-48

File Size 183.66K  /  11 Page

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    M27V401-150F1 M27V401-200F6TR M27V401-150F6

STMICROELECTRONICS
Part No. M27V401-150F1 M27V401-200F6TR M27V401-150F6
OCR Text ...ransition e = v il , g = v il 00ns two line output control because eproms are usually used in larger memory arrays, this product features a 2 line con- trol function which accommodates the use of mul- tiple memory connection. the two line...
Description 512K X 8 UVPROM, 150 ns, CDIP32
512K X 8 UVPROM, 200 ns, CDIP32

File Size 160.45K  /  15 Page

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    D2TZM1-1000 D2TZM1-1000M D2TZM1-100M D2TZM1-150 D2TZM1-150M D2TZM1-10 D2TZM1-100 D2TZM1-10M D2TZM1-120 D2TZM1-120M D2TZM

Rhombus Industries Inc.
Part No. D2TZM1-1000 D2TZM1-1000M D2TZM1-100M D2TZM1-150 D2TZM1-150M D2TZM1-10 D2TZM1-100 D2TZM1-10M D2TZM1-120 D2TZM1-120M D2TZM1-20 D2TZM1-200 D2TZM1-200M D2TZM1-20M D2TZM1-250 D2TZM1-250M D2TZM1-300 D2TZM1-300M D2TZM1-70 D2TZM1-70M D2TZM1-75 D2TZM1-75M D2TZM1-350M D2TZM1-400M D2TZM1-500 D2TZM1-500M D2TZM1-60 D2TZM1-600 D2TZM1-600M D2TZM1-60M D2TZM1-80 D2TZM1-80M D2TZM1-50M D2TZM1-90 D2TZM1-90M
OCR Text ................................ 4.00ns max. PWI Input Pulse Width ...................................... 20% of total delay min. Operating Temperature Range Commercial Grade ..... 0O to 70OC Operating Temperature Range Military Grade ...........
Description ACTIVE DELAY LINE, DIP14
14 Pin 10-Tap TTL Buffered Delay Modules

File Size 35.74K  /  1 Page

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    N01L0818L1AN-85I

NanoAmp Solutions, Inc.
Part No. N01L0818L1AN-85I
OCR Text ...0 40 ns address setup time t as 00ns write recovery time t wr 00ns write to high-z output t whz 30 15 ns data to write time overlap t dw 50 40 ns data hold from write time t dh 00 ns end write to low-z output t ow 10 5 ns stock no. 23205...
Description Multiple Circuit Housings with Tabs & Receptacles Including FASTIN-FASTON; 250 FLAG FASTIN-ON ( AMP )

File Size 164.77K  /  9 Page

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    M27V512-100K1TR M27V512-150F1 M27V512-200F1

STMICROELECTRONICS
Part No. M27V512-100K1TR M27V512-150F1 M27V512-200F1
OCR Text ...ransition e = v il , g = v il 00ns two line output control because eproms are usually used in larger memory arrays, the product features a 2 line con- trol function which accommodates the use of mul- tiple memory connection. the two line...
Description 64K X 8 OTPROM, 100 ns, PQCC32
64K X 8 UVPROM, 150 ns, CDIP28
64K X 8 UVPROM, 200 ns, CDIP28

File Size 165.32K  /  16 Page

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For 00ns Found Datasheets File :: 169    Search Time::1.609ms    
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