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10s Datasheet PDF File

For 10s Found Datasheets File :: 27800 Search Time::1.203ms
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				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HP4936DY FN4469 HP4936DYT
OCR Text	... . . . ID Pulsed Drain Current (10s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	5.8A, 30V, 0.037 Ohm, Dual N-Channel,Logic Level Power MOSFET(5.8A, 30V, 0.037 Ω,双N沟道,逻辑电平功率MOS场效应管) 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 30V V(BR)DSS \| 5.8A I(D) \| SO 5.8 A, 30 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5.8A/ 30V/ 0.037 Ohm/ Dual N-Channel/ Logic Level Power MOSFET 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET From old datasheet system
File Size	83.90K / 5 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IGB03N120H2 Q67040-S4599 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4598 IGB03N120H2E3045A
OCR Text	...1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 225 (for SMD) C VGE Ptot 20 62.5 V W ICpuls Symbol VCE IC 9.6 3.9 9.9 9.9 Value 1200 Unit V A VCE 1200V 1200V 1200V IC 3A 3A 3A Eoff 0.15mJ 0.15mJ 0.15mJ Tj 150C 150C 150C Package...
Description	High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技 From old datasheet system HighSpeed 2-Technology IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220 IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
File Size	393.63K / 13 Page	View it Online	Download Datasheet

				Maxim
Part No.	MAX7384
OCR Text	...0C Lead Temperature (soldering, 10s) .................................+300C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation o...
Description	Silicon Oscillator with Low-Power Frequency Switching and Reset Output From old datasheet system
File Size	615.85K / 9 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	RF1S4N100SM RFP4N100 FN2457
OCR Text	...t 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg ...
Description	4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs From old datasheet system
File Size	45.56K / 6 Page	View it Online	Download Datasheet

				ETC[ETC]
Part No.	AO4430 AO4430L
OCR Text	...Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 31 59 16 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4430, AO4430L Electrical Characteristics (T J=25C unless otherwise noted...
Description	N-Channel Enhancement Mode Field Effect Transistor From old datasheet system
File Size	191.91K / 4 Page	View it Online	Download Datasheet

				AOSMD[Alpha & Omega Semiconductors] ETC
Part No.	AO4604
OCR Text	...nnel and p-channel Parameter t 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-Stat...
Description	Complementary Enhancement Mode Field Effect Transistor 增强模式互补场效应晶体管
File Size	432.99K / 9 Page	View it Online	Download Datasheet

				Alpha & Omega Semicondu... AOSMD[Alpha & Omega Semiconductors]
Part No.	AO6602 AO6602L
OCR Text	...nnel and p-channel Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RJA RJL Typ 78 106 64 Max 110 150 80 Units C/W C/W C/W Alpha & Omega ...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	139.08K / 7 Page	View it Online	Download Datasheet

				http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
Part No.	DIM2400ESM17-A000
OCR Text	...ch 2002 FEATURES s s s s 10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 2400A 48...
Description	Single Switch IGBT Module
File Size	180.09K / 10 Page	View it Online	Download Datasheet

				hitachi
Part No.	HAT3008RJ
OCR Text	...2.14 2 3 150 -55 to +150 PW 10s, duty cycle 1 % 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s Value at Tch=25C,...
Description	GaAlAs Infrared Emitting Diode From old datasheet system
File Size	187.97K / 15 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	IRF730 FN1580
OCR Text	...t 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute M...
Description	BEAD,FERRITE,1000 OHMS, /-25%,100MA,0603 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET From old datasheet system
File Size	53.67K / 7 Page	View it Online	Download Datasheet

For 10s Found Datasheets File :: 27800 Search Time::1.203ms
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