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120-channel Datasheet PDF File

For 120-channel Found Datasheets File :: 52687 Search Time::4.11ms
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				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...00 200 A IIN(on) RDS(on) 90 160 120 240 VIN(th) 1.3 0.8 1.7 10 2.2 30 A mW IDSS 1.5 4 8 12 V A VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determina...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	120 Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on)...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110E6
OCR Text	...hing 600V max. 2A / 2A 10 - 20V 120 & 94 ns 10 ns Description The IR2110E6 is a high voltage, high speed power MOSFET and IGBT driver wi...channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which ...
Description	HIGH AND LOW SIDE DRIVER
File Size	306.76K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110L6
OCR Text	...hing 600V max. 2A / 2A 10 - 20V 120 & 94 ns 10 ns Description The IR2110L6 is a high voltage, high speed power MOSFET and IGBT driver wi...channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which ...
Description	HIGH AND LOW SIDE DRIVER
File Size	337.18K / 14 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IR2110L
OCR Text	...hing 400V max. 2A / 2A 10 - 20V 120 & 94 ns 10 ns Description The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver wi...channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which ...
Description	HIGH AND LOW SIDE DRIVER
File Size	131.31K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text	...max. 600V max. 2A / 2A 10 - 20V 120 & 94 ns Delay Matching (IR2110) 10 ns max. (IR2113) 20ns max. Packages Description The IR2110/...channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which ...
Description	HIGH AND LOW SIDE DRIVER
File Size	218.79K / 16 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	... VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Tran...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	... VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Tran...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text	...00 VGS = 20V nA -100 VGS = -20V 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 43A ns --- RG = 3.6 ---...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
File Size	144.82K / 10 Page	View it Online	Download Datasheet

For 120-channel Found Datasheets File :: 52687 Search Time::4.11ms
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