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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH4V64AWXJ-5 MH4V64AWXJ-6 MH4V64AWXJ
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| OCR Text |
...256 Bytes FPM DRAM A0-A12 A0-A8 1bank x64 0 3.3V LVTTL 50ns 60ns 13ns 15ns non parity N/R(15.625uS) x16 N/A open open rev 1 Check sum for -5 Check sum for -6 64-71 72 Manufacturers JEDEC ID code per JEP-106 Manufacturing location MITSUBISHI... |
| Description |
From old datasheet system
FAST PAGE MODE 268435456 - BIT ( 4194304 - WORD BY 64 - BIT ) DYNAMIC RAM
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| File Size |
169.43K /
20 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH8S72PHC-7 B99011 MH8S72PHC-8 MH8S72PHC-10
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| OCR Text |
...28 256 Bytes SDRAM A0-A11 A0-A8 1bank x72 0 LVTTL 10ns 6ns 8ns
ECC
SPD DATA(hex) 80 08 04 0C 09 01 48 00 01 A0 60 80 02 80 10 10 01 8F 04 06 01 01 00 0E A0 D0 F0 60 70 80 00 00 14 1E 14 14 1E 32 3C
Cycle time for CL=3 SDRAM Access fr... |
| Description |
From old datasheet system
603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM
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| File Size |
585.65K /
55 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH16S72PHB-10 MH16S72PHB-7 B99013 MH16S72PHB-8
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| OCR Text |
...28 256 Bytes SDRAM A0-A11 A0-A9 1bank x72 0 LVTTL 10ns 6ns 8ns
ECC
SPD DATA(hex) 80 08 04 0C 0A 01 48 00 01 A0 60 80 02 80 08 08 01 8F 04 06 01 01 00 0E A0 D0 F0 60 70 80 00 00 14 1E 14 14 1E 32 3C
Cycle time for CL=3 SDRAM Access fr... |
| Description |
From old datasheet system
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
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| File Size |
587.22K /
55 Page |
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it Online |
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Hynix
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| Part No. |
HY5W6B6DLF
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| OCR Text |
...of a quarter bank, a half bank, 1bank, 2banks, or all banks. The Hynix HY5W6B6DLF(P) has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to reduce self refresh current consumption. Since an internal tempera... |
| Description |
4 Bank x 1 M x 16 Bit Synchronous DRAM
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| File Size |
315.29K /
27 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSC23S2720E-8BS9
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| OCR Text |
... * * * * * 2-Meg Word x 72-Bit (1bank 8 Byte) organization 168-pin Dual Inline Memory Module All DQ Pins have 10 Damping Resister Single 3.3V power supply, 0.3V tolerance Input :LVTTL compatible Output :LVTTL compatible Refresh : 4,096 cycl... |
| Description |
2,097,152 Word x72 Bit Synchronous Dynamic RAM Module (2BANK)(2M字2位同步动态RAM模块)
From old datasheet system
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| File Size |
71.82K /
11 Page |
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it Online |
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