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1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2386 Search Time::1.094ms
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				INFINEON[Infineon Technologies AG]
Part No.	Q67040-S4654 IGA03N120H2 Q67040-S4648
OCR Text	... td(on) 10ns td(on) tr 1ns 0A 2A 4A tr 1ns 0 50 100 150 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 82, dynamic test c...
Description	IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT FullPak HighSpeed 2-Technology
File Size	198.98K / 10 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products]
Part No.	MAX9115 MAX9115EXK-T
OCR Text	.../2\|, input rise and fall time = 1ns (20% to 80%), input frequency = 100MHz, TA = -40C to +85C, unless otherwise noted. Typical values at VCC = +3.3V, \|VID\| = 0.2V, VCM = 1.2V, TA = +25C.) (Figures 2 and 3) (Notes 4 and 5) PARAMETER Differe...
Description	Single LVDS Line Receiver in SC70
File Size	136.50K / 8 Page	View it Online	Download Datasheet

				Elite Semiconductor Memory Technology Inc.
Part No.	M12L64164A-5BG M12L64164A-6BG M12L64164A-7BG M12L64164A07
OCR Text	...lock rising time is longer than 1ns. (tr/2 - 0.5) ns should be considered. 3. Assumed input rise and fall time (tr & tf) =1ns. If tr & tf is longer than 1ns. transient time compensation should be considered. i.e., [(tr + tf)/2 - 1] ns shoul...
Description	1M x 16 Bit x 4 Banks Synchronous DRAM
File Size	811.41K / 45 Page	View it Online	Download Datasheet

				Pericom Technology PERICOM[Pericom Semiconductor Corporation]
Part No.	PI90LVT386 PI90LV386
OCR Text	... Part-to-part skew is less than 1ns * Integrated 110-Ohm termination on PI90LVT386 * Low Voltage TTL (LVTTL) levels are 5V tolerant * Open-circuit fail safe * Flow-through pin out * Packaging (Pb-free & Green available): - 64-Pin Thin Shrin...
Description	High-Speed Differential Line Receivers
File Size	162.95K / 8 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT48H8M32LFB5-10 MT48H8M32LFF5-10 MT48H8M32LFF5-8 MT48V8M32LFB5-10
OCR Text	... cl = 3 -75 133 mhz ? 6ns 2.5ns 1ns -8 125 mhz ? 7ns 2.5ns 1ns -10 100 mhz ? 7ns 2.5ns 1ns -75 133 mhz 7ns ? 2.5ns 1ns -8 104 mhz 8ns ? 2.5ns 1ns -10 83 mhz 8ns - 2.5ns 1ns pdf: 09005aef80d460f2/source: 09005aef80cd8d41 micron technology,...
Description	MOBILE SDRAM
File Size	1,578.59K / 75 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
File Size	124.69K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text	...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description	128Mb SDRAM, 3.3V, LVTTL, 100MHz 2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
File Size	62.82K / 8 Page	View it Online	Download Datasheet

For 1ns Found Datasheets File :: 2386 Search Time::1.094ms
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