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  2.8ghz Datasheet PDF File

For 2.8ghz Found Datasheets File :: 1203    Search Time::5.219ms    
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    HFA3096 HFA3096B HFA3127B HFA3128 HFA3128B HFA3046 HFA3046B HFA3127 FN3076

INTERSIL[Intersil Corporation]
Part No. HFA3096 HFA3096B HFA3127B HFA3128 HFA3128B HFA3046 HFA3046B HFA3127 FN3076
OCR Text ... Pinouts HFA3046 TOP VIEW 1 2 3 4 5 6 7 Q3 Q2 Q1 Q5 14 13 12 11 5 Q4 10 9 8 6 7 8 Q3 1 2 3 4 Q2 Q4 Q1 Q5 HFA3096 TOP VIEW 16 NC 15 14 13 12 11 10 9 1 2 3 4 NC 5 6 7 8 HFA3127 TOP VIEW 16 Q1 15 14 Q2 Q5 13 12 11 10 Q3 Q4 9 1 2 3 ...
Description From old datasheet system
Ultra High Frequency Transistor Arrays

File Size 57.18K  /  9 Page

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    HFA3127 HFA3127MJ_883 HFA3127_883 FN3967 HFA3127/883

INTERSIL[Intersil Corporation]
Part No. HFA3127 HFA3127MJ_883 HFA3127_883 FN3967 HFA3127/883
OCR Text ...r the Provisions of Paragraph 1.2.1. * NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . .8GHz (Typ) * NPN Current Gain . . . . . . . . . . . . . . . . . . . . . . . 40 (Min) * NPN Early Voltage (VA) . . . . . . . . . . . . . . . ....
Description    Ultra High Frequency Transistor Array
From old datasheet system

File Size 53.41K  /  7 Page

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    BFP193W Q62702-F1577

SIEMENS[Siemens Semiconductor Group]
Part No. BFP193W Q62702-F1577
OCR Text ...n BFP 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...8GHz VCE = Parameter 15 dB dB 13 10V 10V 3V 2V G 18 G 5V 3V 12 11 10 9 16 2V...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.05K  /  7 Page

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    BFP193 Q62702-F1282 BFP193Q62702-F1282

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text ...on BFP 193 RCs Q62702-F1282 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...8GHz VCE = Parameter 13 dB dB 11 10V 5V 3V 2V G 10V 16 5V 3V G 10 9 8 14 2...
Description NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system

File Size 60.37K  /  7 Page

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    MAX2683 MAX2683EUE MAX2684EUE

Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
Part No. MAX2683 MAX2683EUE MAX2684EUE
OCR Text ...3) +8dBm to +12dBm (MAX2684) o +2.7V to +5.5V Single-Supply Operation o Ultra-Small 16-Pin TSSOP-EP Package General Description The MAX2...8GHz frequency band. The MAX2683 is optimized for downconversion to IF frequencies between 100MHz an...
Description 50 Ohm Line Drivers 14-PDIP 0 to 70
3.5GHz Downconverter Mixers with Selectable LO Doubler

File Size 300.21K  /  18 Page

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    Q62702-F1359 BFG19S BFG19

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1359 BFG19S BFG19
OCR Text ...BFG 19S BFG19S Q62702-F1359 1=E 2=B 3=E 4=C Package SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...8GHz VCE = Parameter 10 dB 10V G G 5V 3V 6 2V 8 1V 6 4 1V 2 4 0.7V...
Description NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
NPN Silicon RF Transistor (For low noise low distortion broadband amplifiers in antenna)
From old datasheet system
NPN Silicon RF Transistor (For low noise/ low distortion broadband amplifiers in antenna)

File Size 49.50K  /  6 Page

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    Q62702-F1382 BFP183

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
Part No. Q62702-F1382 BFP183
OCR Text 2 mA to 30 mA * fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking...8GHz VCE = Parameter 16 dB 10V 5V dB 10V G 18 G 12 3V 2V 3V 2V 16 10 ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管(对于低噪声,高增益2毫安0毫安的集电极电流宽带放大器)
NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system

File Size 60.49K  /  7 Page

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    Q62702-F1492 BFR182W

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1492 BFR182W
OCR Text ...n BFR 182W RGs Q62702-F1492 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...8GHz VCE = Parameter 14 dB 10V 3V dB 10V 3V 2V G G 10 16 2V 8 14 6 12 1...
Description NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 55.96K  /  7 Page

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    Q62702-F1494 BFR280W

SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1494 BFR280W
OCR Text ...n BFR 280W REs Q62702-F1494 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage ...8GHz VCE = Parameter 14 dB 2V 10V 3V 2V G 16 G 10 14 1V 12 0.7V 8 1V 6 ...
Description NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
From old datasheet system

File Size 56.22K  /  7 Page

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    SBFP420M

SANYO[Sanyo Semicon Device]
Part No. SBFP420M
OCR Text ...0.3 4 3 0.15 1.6 1 1.3 2.0 2 0.25 2.1 0.85 1:Collector 2:Emitter 3:Base 4:Emitter SANYO:MCPH4 Absolute Maximum Ratings...8GHz VCE=2V, IC=20mA, f=1.8GHz VCE=2V, IC=5mA, f=1.8GHz 50 13 18 12 14 18 25 0.15 15 17 1.1 0.3 Cond...
Description UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications

File Size 44.73K  /  2 Page

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