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  2110-2170 Datasheet PDF File

For 2110-2170 Found Datasheets File :: 1365    Search Time::7.406ms    
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    MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF21010LR1

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF21010LR1
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical W - CDMA Performance: - 45 dBc ACPR, ...
Description 2170 MHz, 10 W, 28 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 538.54K  /  8 Page

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    MRF21180R6 MRF21180

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. MRF21180R6 MRF21180
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - carrier W - CDMA Performance for VDD ...
Description 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor

File Size 516.52K  /  12 Page

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    LET21008

STMICROELECTRONICS[STMicroelectronics]
Part No. LET21008
OCR Text ...LL PHASE ANGLES DYNAMIC (f = 2110 - 2170 MHz) POUT(1) D(1) GP POUT(W-CDMA) D(W-CDMA) (1) 1 dB Compression point VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD 8 40 11 45 13 2.5 25 W % dB W % VDD = 26 V IDQ = TBD POUT = 8 W AC...
Description RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE

File Size 39.84K  /  4 Page

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    LET21030C -LET21030C

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. LET21030C -LET21030C
OCR Text ...LL PHASE ANGLES DYNAMIC (f = 2110 - 2170 MHz) POUT(1) D (1) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD mA POUT = 30 W 25 40 30 45 11 5 20 W % dB W % GP POUT(W-CDMA)(2) D(W-CDMA)(2) ACPR -45 dBc ...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology RF功率晶体管LDMOS的增强技

File Size 61.65K  /  4 Page

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    MRF21090 MRF21090R3 MRF21090SR3

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. MRF21090 MRF21090R3 MRF21090SR3
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * Typical W - CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power -- 11.5 ...
Description 2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET
RF Power Field Effect Transistors

File Size 553.11K  /  8 Page

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    MRF21125S MRF21125 MRF21125SR3

Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
Part No. MRF21125S MRF21125 MRF21125SR3
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-c...
Description RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs

File Size 378.36K  /  12 Page

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    Motorola
Part No. MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
OCR Text ...lications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-c...
Description 2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET

File Size 200.55K  /  12 Page

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    MRF5S21130HSR3 MRF5S21130HR3

Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
Part No. MRF5S21130HSR3 MRF5S21130HR3
OCR Text ...pplications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 -...
Description 2170 MHz, 28 W AVG., 28 V, 2 x W–CDMA, Lateral N–Channel RF Power MOSFET
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.

File Size 367.74K  /  12 Page

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    wj
Part No. FP2189
OCR Text ... - 1990 MHz Application Circuit 2110 - 2170 MHz Application Circuit Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communicati...
Description TRANSISTOR,JFET,P-CHANNEL,SOT-89

File Size 602.99K  /  12 Page

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    LET21004

STMICROELECTRONICS[STMicroelectronics]
Part No. LET21004
OCR Text ...LL PHASE ANGLES DYNAMIC (f = 2110 - 2170 MHz) Pout(1) D(1) GP D(W-CDMA) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ = TBD IDQ = TBD POUT = 4 W 3 40 11 4 45 13 1 25 W % dB W % POUT(W-CDMA) ACPR: -45dBc ACPR: -45dBc (1) 1 dB Comp...
Description RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE

File Size 39.94K  /  4 Page

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