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FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
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| Part No. |
FDS898407 FDS8984
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| OCR Text |
23m General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charg... |
| Description |
N-Channel PowerTrench? MOSFET
N-Channel PowerTrench庐 MOSFET
N-Channel PowerTrench㈢ MOSFET
N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm 7 A, 30 V, 0.032 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
329.22K /
6 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZXTN2007ZTA ZXTN2007Z
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| OCR Text |
23m ; IC = 6.0A DESCRIPTION
Packaged in the SOT89 outline this new low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.
FEAT... |
| Description |
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
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| File Size |
117.21K /
6 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
ZX5T849ZTA ZX5T849Z
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| OCR Text |
23m ; IC = 6.0A DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 30V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management fun... |
| Description |
From old datasheet system
30V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
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| File Size |
116.51K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDM3300NZ_07 FDM3300NZ
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| OCR Text |
...Specified PowerTrench 20V, 10A, 23m Features General Description
Max rDS(on) = 23m at VGS = 4.5V, ID = 10A Max rDS(on) = 28m at VGS = 2.5V, ID = 9A >2000V ESD protection Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm RoHS Co... |
| Description |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 10A, 23mヘ
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| File Size |
188.85K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDFS6N548
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| OCR Text |
23m Features
Integrated N-Channel PowerTrench(R) MOSFET and Schottky Diode
General Description
The FDFS6N548 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottk... |
| Description |
Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm
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| File Size |
372.81K /
7 Page |
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SUMIDA[Sumida Corporation]
http://
Sumida, Corp.
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| Part No. |
CDEP149-3R0NC-H CDEP149 CDEP149-0R4MB CDEP149-0R4MB-H CDEP149-0R4MC CDEP149-0R4MC-H CDEP149-0R4NB CDEP149-0R4NB-H CDEP149-0R4NC CDEP149-0R4NC-H CDEP149-0R7MB CDEP149-0R7MB-H CDEP149-0R7MC CDEP149-0R7MC-H CDEP149-0R7NB CDEP149-0R7NB-H CDEP149-0R7NC CDEP149-0R7NC-H CDEP149-1R0MB CDEP149-1R0MB-H CDEP149-1R0MC CDEP149-1R0MC-H CDEP149-1R0NB CDEP149-1R0NB-H CDEP149-1R0NC CDEP149-1R0NC-H CDEP149-1R7MB CDEP149-1R7MB-H CDEP149-1R7MC CDEP149-1R7MC-H CDEP149-1R7NB CDEP149-1R7NB-H CDEP149-1R7NC CDEP149-1R7NC-H CDEP149-1R8MB CDEP149-1R8MB-H CDEP149-1R8MC CDEP149-1R8MC-H CDEP149-1R8NB CDEP149-1R8NB-H CDEP149-1R8NC CDEP149-1R8NC-H CDEP149-3R0MB CDEP149-3R0MB-H CDEP149-3R0MC CDEP149-3R0MC-H CDEP149-3R0NB CDEP149-3R0NB-H CDEP149-3R0NC CDEP147-4R7MB-HNP CDEP147-4R7MC-HNP CDEP149-0R4NB-HNP CDEP149-0R4NC-HNP CDEP147-0R9MCNP CDEP147-0R9MBNP CDEP147-5R9MB-HNP CDEP147-5R9MC-HNP CDEP147-4R7MBNP CDEP147-1R8MB-HNP CDEP147-7R7MBNP P149-0R4NC-HNP P149-0R7NCNP
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| OCR Text |
....7 5.9 6.1 7.3 7.7 9.5 8.53m 11.23m 12.4 11.2 10.0 8.5 6.92m 14.8 11.0 11.23m 14.6 8.5 5.16m 15.2 13.5 4.06m 18.4 16.0 5.16m 6.92m 8.53m 20.8 17.6 16.4 13.5 11.0 10.0 2.95m 22.4 17.5 4.06m 24.4 16.0 2.43m 27.2 20.0 2.95m 29.6 17.5 1.86m 36.... |
| Description |
1 ELEMENT, 0.75 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 7.7 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS
1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
1 ELEMENT, 0.45 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
1 ELEMENT, 0.9 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
1 ELEMENT, 5.9 uH, GENERAL PURPOSE INDUCTOR, SMD LEAD FREE
POWER INDUCTORS (SMD Type) 1 ELEMENT, 0.9 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS (SMD Type) 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR, SMD
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| File Size |
103.72K /
2 Page |
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Sumida, Corp.
SUMIDA[Sumida Corporation]
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| Part No. |
CDRH5D28R CDRH5D18 CDRH5D28 CDRH5D28R-8R0NB CDRH5D28R-8R0NC CDRH5D18NP100NC SUMIDACORP-CDRH5D28-120NB CDRH5D28-120NC
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| OCR Text |
...( 28m) 1.90 57m( 42m) 1.95 31m( 23m) 2.20 31.1m( 23m) 1.85 Rated Current (A) *4 D.C.R.() : Max.(Typ.) 18m( 13m) 24m( 18m) Rated Current (A) *4 2.60 2.40 20.3m( 15m) 27.0m( 20m) 2.30 2.10 D.C.R.() : Max.(Typ.) 17.6m( 13m) Rated Current (A) *... |
| Description |
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Shielded Power Inductor 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8 uH, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS
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| File Size |
93.35K /
2 Page |
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Cystech Electonics Corp...
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| Part No. |
MTC2605G6
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| OCR Text |
... =4.5v) -2.9a(v gs =-4.5 v) 23m (v gs =4.5v) 79m (v gs =-4.5v) 30m (v gs =2.5v) 117m (v gs =-2.5v) r dson ( typ .) 46m (v gs =1.8v) 160m (v gs =-1.8v) description the mtc2605g6 consists of a n-channel and a p- channel enhance... |
| Description |
P-Channel Enhancement Mode MOSFET
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| File Size |
343.67K /
13 Page |
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SUMIDA[Sumida Corporation]
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| Part No. |
CDRH103R CDRH103R-8R2NC CDRH103R-220NB CDRH103R-2R2NB
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| OCR Text |
...60 91.0m( 70m) 2.60 2.05 30.0m( 23m) 35.0m( 27m) 50.0m( 38m) 59.0m( 45m) 4.65 3.84 3.54 3.18 4.00 21.0m( 16m) 5.56 4.70 5.7m( 4.4m) 11.0m( 8.5m) 16.9m( 13m) Saturation Rated Current (A) *C 11.2 8.0 6.7 Temperature Rise Rated Current (A) * I... |
| Description |
1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 8.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS (SMD Type)
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| File Size |
212.10K /
1 Page |
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Price and Availability
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