|
|
|
NXP Semiconductors N.V.
|
Part No. |
BUK6209-30c
|
OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET
|
File Size |
182.54K /
14 Page |
View
it Online |
Download Datasheet |
|
|
|
NXP Semiconductors N.V.
|
Part No. |
BUK653R7-30c
|
OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET
|
File Size |
190.17K /
14 Page |
View
it Online |
Download Datasheet |
|
|
|
NXP Semiconductors N.V.
|
Part No. |
BUK6213-30c
|
OCR Text |
1. product profile 1.1 general description intermediate level gate drive n-channel enhan cement mode field-effect transistor (fet) in a plastic package using advanced trenchmos technology. this product has been designed and qualified t... |
Description |
N-channel TrenchMOS intermediate level FET 47 A, 30 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
File Size |
159.87K /
14 Page |
View
it Online |
Download Datasheet |
|
|
|
VALPEY FISHER CORP
|
Part No. |
HD57L0160MHZ
|
OCR Text |
...eady state, 25c steady state, -30c start-up current 15 50 200 25 ma 10v supply load 50 ohm warm-up time to 1 ppm accuracy 25 s output waveform (+7 3) dbm sinewave 10 v supply control voltage vc 0 8 v ... |
Description |
OCXO, SINE OUTPUT, 160 MHz
|
File Size |
74.28K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|